Abstract: Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)4N+F?, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

Abstract: Disclosed herein are compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins. More particularly, disclosed herein are compositions for removing silicone resins, the compositions including a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)4N+F?, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

Abstract: A semiconductor wafer including a main body including first and second surfaces opposite each other, a notch including a recess on an outer periphery, a first bevel region formed along the outer periphery of the main body, including a first slope connecting the first and second surfaces and having a first height with respect to a straight line extending from a first point where the first surface and the first slope meet to a second point where the second surface and the first slope meet, and a second bevel region in contact with the recess or opening, including a second slope connecting the first and second surfaces and having a second height, different from the first height, with respect to a straight line extending from a third point where the first surface and the second slope meet to a fourth point where the second surface and the second slope meet.

Abstract: A semiconductor wafer including a main body including first and second surfaces opposite each other, a notch including a recess on an outer periphery, a first bevel region formed along the outer periphery of the main body, including a first slope connecting the first and second surfaces and having a first height with respect to a straight line extending from a first point where the first surface and the first slope meet to a second point where the second surface and the first slope meet, and a second bevel region in contact with the recess or opening, including a second slope connecting the first and second surfaces and having a second height, different from the first height, with respect to a straight line extending from a third point where the first surface and the second slope meet to a fourth point where the second surface and the second slope meet.

Abstract: Disclosed herein are compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins. More particularly, disclosed herein are compositions for removing silicone resins, the compositions including a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)4N+F?, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

Abstract: A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: A dustproof fabric for use in manufacturing a smock to be worn in a clean room of a semiconductor fabrication facility includes an inner layer of a knitted fabric, an intermediate layer attached to the inner layer and formed of a non-micro porous polyurethane resin film possessing a high degree of moisture absorbency, and an outer layer attached to the intermediate layer and formed of a high density polyester woven fabric containing conductive yarn in the warp and weft.

Abstract: A system for supplying slurry to a processing facility, includes a tank containing the slurry, and slurry supply piping connected to the tank to allow the slurry to flow from the tank to the processing facility. A sonic wave generator is disposed along the slurry supply piping, such that sonic waves are propagated through the slurry. The sonic waves prevent the clustering of small primary abrasive particles into larger secondary abrasive particles, or break apart any clustered secondary particles, which may cause fine scratches on the surface of a wafer during a polishing operation.

Abstract: A photo-oxidation device of a water treatment system photo-oxidizes organic material, in particular, aromatic organic material, in the water to facilitate its removal from the water. The photo-oxidation device includes a UV lamp, a flow channel in which the UV lamp is disposed, and a catalyst of an oxidation reaction between an organic material and the UV radiation emitted by the UV lamp. The UV radiation emitted from the UV lamp illuminates the flow channel while the water passes through the flow channel. The catalyst, on the other hand, is fixed to an inner wall of the flow channel to foster the oxidation of the organic material by the UV radiation. The water treatment system in which the photo-oxidation device is incorporated, includes a pre-treatment unit having particle filters, a first treatment section, and a second treatment section.

Abstract: A dust-proof fabric is disclosed. The fabric comprises an inner knit fabric layer, an intermediate layer of a moisture absorbent polyurethane film and a high density woven polyester fabric outer layer. The outer layer contains a first set of spaced apart conductive yarns aligned with one another in the warp direction and a second set of spaced apart conductive yarns aligned in the weft direction.

Abstract: Compositions for making ultrapure water in microelectronic device fabrication processes comprise hydrogen peroxide, peracetic acid, and water. Methods of sterilizing ultrapure water delivery systems for use in microelectronic device fabrication processes comprise contacting ultrapure water delivery systems with water having temperatures ranging from about 26.degree. C. to about 40.degree. C.; and sterilizing the ultrapure water delivery systems with compositions comprising hydrogen peroxide, peracetic acid, and water. The ultrapure water delivery systems comprise water tanks, heat exchangers in fluid communication with the water tanks, ultraviolet sterilizers in fluid communication with the heat exchangers, OR-polishers in fluid communication with the ultraviolet sterilizers, MB-polishers in fluid communication with the OR-polishers, and ultrafilters in fluid communication with the OR-polishers. The compositions employed in the sterilizing step do not contact the OR-polishers and the MB-polishers.