Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

Abstract: Microstructures and methods of fabricating microstructures are disclosed. One exemplary microstructure, among others, includes a substrate, an overcoat layer disposed upon the substrate, an air-region within at least a portion of the overcoat layer, and a framing material layer engaging at least a portion of the air-region on the inside of the framing material layer and engaging the overcoat layer on the outside of the framing material layer.

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

Abstract: A durable skin marking composition that remains legible and visible on the skin after being treated with an aqueous, alcohol-based solution. The skin marking composition of the present invention includes a cyanoacrylate base and a colorant. The cyanoacrylate base can be n-butyl cyanoacrylate, 2-ethyl-cyanoacrylate, 2-octyl-cyanoacrylate, or a combination of the foregoing. The colorant can be a dye, pigment, contrast agent, colored particle, fluorescent particle, radio-opaque particle, or a combination of the foregoing. The composition can further comprise one or more of viscosity modifiers/thickening agents, stabilizers, plasticizers, formaldehyde scavengers, polymerization accelerators, perfumes, adhesion promoters, and anti-bacterial, anti-fungal, anti-viral, or anti-microbial agents.

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

Abstract: Compositions, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary composition, among others, includes a polymer and a catalytic amount of a negative tone photoinitiator.

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

Abstract: Microstructures and methods of fabricating microstructures are disclosed. One exemplary microstructure, among others, includes a substrate, an overcoat layer disposed upon the substrate, an air-region within at least a portion of the overcoat layer, and a framing material layer engaging at least a portion of the air-region on the inside of the framing material layer and engaging the overcoat layer on the outside of the framing material layer.

Abstract: Compositions, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary composition, among others, includes a polymer and a catalytic amount of a negative tone photoinitiator.

Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material to occupy a closed interior volume in a semiconductor structure. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

Abstract: Microstructures and methods of fabricating microstructures are disclosed. One exemplary microstructure, among others, includes a substrate, an overcoat layer disposed upon the substrate, an air-region within at least a portion of the overcoat layer, and a framing material layer engaging at least a portion of the air-region on the inside of the framing material layer and engaging the overcoat layer on the outside of the framing material layer.

Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.

Abstract: Microstructures and methods of fabricating microstructures are disclosed. One exemplary microstructure, among others, includes a substrate, an overcoat layer disposed upon the substrate, an air-region within at least a portion of the overcoat layer, and a framing material layer engaging at least a portion of the air-region on the inside of the framing material layer and engaging the overcoat layer on the outside of the framing material layer.

Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.

Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.

Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material to occupy a closed interior volume in a semiconductor structure. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.