Patents by Inventor Suem Ping Loo

Suem Ping Loo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transient voltage suppressor and method
    Patent number: 8339758
    Abstract: A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: December 25, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Mingjiao Liu, Ali Salih, Emmanuel Saucedo-Flores, Suem Ping Loo
  • Bi-directional diode structure
    Patent number: 8138520
    Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: March 20, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Mark Duskin, Suem Ping Loo, Ali Salih
  • BI-DIRECTIONAL DIODE STRUCTURE
    Publication number: 20110266591
    Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
    Type: Application
    Filed: July 7, 2011
    Publication date: November 3, 2011
    Inventors: Mark Duskin, Suem Ping Loo, Ali Salih
  • Method of forming a bi-directional diode and structure therefor
    Patent number: 8003478
    Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: August 23, 2011
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Mark Duskin, Suem Ping Loo, Ali Salih
  • METHOD OF FORMING A BI-DIRECTIONAL DIODE AND STRUCTURE THEREFOR
    Publication number: 20090302424
    Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
    Type: Application
    Filed: June 6, 2008
    Publication date: December 10, 2009
    Inventors: Mark Duskin, Suem Ping Loo, Ali Salih
  • TRANSIENT VOLTAGE SUPPRESSOR AND METHOD
    Publication number: 20090273876
    Abstract: A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
    Type: Application
    Filed: May 1, 2008
    Publication date: November 5, 2009
    Inventors: Mingjiao Liu, Ali Salih, Emmanuel Saucedo-Flores, Suem Ping Loo
  • TRANSIENT VOLTAGE SUPPRESSOR AND METHOD
    Publication number: 20090273868
    Abstract: A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
    Type: Application
    Filed: May 7, 2008
    Publication date: November 5, 2009
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Mingjiao Liu, Ali Salih, Emmanuel Saucedo-Flores, Suem Ping Loo