Abstract: A transition metal dichalcogenides device includes a substrate, at least one layer of boron nitride, a tungsten diselenide monolayer positioned such that the at least one layer of boron nitride at least partially encapsulates the tungsten diselenide monolayer, and a plurality of electrodes. Each of the plurality of electrodes includes gold and few-layer graphene, and the at least one layer of boron nitride includes hexagonal few-layer boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K? valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2 s to 11 s when the external magnetic field is in the range of about ?17 T to about 17 T.

Abstract: A transition metal dichalcogenides device includes a substrate, a bottom layer of boron nitride, a tungsten diselenide monolayer on the bottom layer of boron nitride, a top layer of boron nitride on the tungsten diselenide monolayer such that the bottom and top layers of boron nitride at least partially encapsulate the tungsten diselenide monolayer, a source electrode on the substrate, a drain electrode on the substrate, and a top gate electrode on the top layer of boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K? valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about ?17 T to about 17 T.

Abstract: A transition metal dichalcogenides device includes a substrate, a bottom layer of boron nitride, a tungsten diselenide monolayer on the bottom layer of boron nitride, a top layer of boron nitride on the tungsten diselenide monolayer such that the bottom and top layers of boron nitride at least partially encapsulate the tungsten diselenide monolayer, a source electrode on the substrate, a drain electrode on the substrate, and a top gate electrode on the top layer of boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K? valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about ?17 T to about 17 T.