Abstract: A UV nanoimprint lithography process and its apparatus that are able to repeatedly fabricates nanostructures on a substrate (wafer, UV-transparent plate) by using a stamp that is as large as or smaller than the substrate in size are provided. The apparatus includes a substrate chuck for mounting the substrate; a stamp made of UV-transparent materials and having more than two element stamps, wherein nanostructures are formed on the surface of each element stamp; a stamp chuck for mounting the stamp; a UV lamp unit for providing UV light to cure resist applied between the element stamps and the substrate; a moving unit for moving the substrate chuck or the stamp chuck to press the resist with the element stamps and substrate; and a pressure supply unit for applying pressurized gas to some selected regions of the substrate to help complete some incompletely filled element stamps.

Abstract: A cathode active material for a lithium rechargeable battery is provided. The cathode active material is used for a lithium rechargeable battery containing a cathode, an anode, and an electrolytic solution. The cathode active material is composed of 0.5% by weight or less carbonate ion (CO32?) plus bicarbonate ion (HCO3?) and 0.1% by weight or less hydroxyl ion (OH?). The swelling of lithium battery containing the cathode active material is substantially suppressed when is placed at 60° C. or more.

Abstract: A photoelectric conversion device using a semiconductor nanomaterial to which a rectifying action caused by a Schottky junction between semiconductor nanomaterials and metal is applied and a method of manufacturing the same are provided. The photoelectric conversion device includes a substrate, an insulating layer formed on the substrate, a nanomaterial layer made of a plurality of semiconductor nanomaterials vertically arranged between the insulating layer or horizontally arranged on the substrate, and a metal layer provided on the semiconductor nanomaterial layer to form a Schottky junction with the semiconductor nanomaterials. The electrical energy is generated by rectification generated between the semiconductor nanomaterials and the metal layer that form the Schottky junction with each other.

Abstract: An organic light emitting device having a photonic crystal structure and a manufacturing method thereof are provided. The organic light emitting device comprises: a substrate through which light passes; a photonic crystal layer formed on the substrate and having a photonic crystal structure; an intermediate layer formed on the photonic crystal layer and having a large refractive index compared with the photonic crystal layer; a first electrode layer formed on the intermediate layer; a light emitting layer formed on the first electrode layer and emitting light according to current flow; and a second electrode layer formed on the light emitting layer.

Abstract: An organic electrolytic solution and a rechargeable lithium battery comprising the same is provided. The organic electrolytic solution contains a lithium salt and an organic solvent mixture. The organic solvent mixture is comprised of a solvent with high permittivity, a solvent with a low boiling point, and a cyclic organic compound having at least an oxy-carbonyl group and having a ring structure of 6 units or more. The organic electrolytic solution helps to increase reduction decomposition stability in the lithium battery using the same. As a result, the irreversible capacity of the lithium battery at a first cycle decreases and charge/discharge efficiency and lifespan of the lithium battery increases. In addition, the battery thickness is maintained within a specific range at room temperature after formation and standard charging, which improves the reliability of the lithium battery.

Abstract: Example embodiments relate to nonvolatile semiconductor memory devices using an electric charge storing layer as a storage node and fabrication methods thereof. An electric charge trap type nonvolatile memory device may include a tunneling film, an electric charge storing layer, a blocking insulation film, and a gate electrode. The blocking insulation film may be an aluminum oxide having an energy band gap larger than that of a ?-phase aluminum oxide film. An ?-phase crystalline aluminum oxide film as a blocking insulation film may have an energy band gap of about 7.0 eV or more along with fewer defects. The crystalline aluminum oxide film may be formed by providing a source film (e.g., AlF3 film) on or within a preliminary blocking insulation film (e.g., amorphous aluminum oxide film) and performing a heat treatment. Alternatively, an aluminum compound (e.g., AlF3) may be introduced into the preliminary blocking insulation film by other diffusion methods or ion implantation.

Abstract: In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.

Abstract: A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

Abstract: An organic electrolytic solution comprising a nonaqueous solvent and a lithium salt, wherein the organic electrolytic solution comprises a compound of Formula 1 and at least one selected from compounds of Formulas 2 through 5: wherein R1, a C1˜C10 alkoxy group, wherein R2 and R3 are independently unsubstituted C1˜C5 alkyl group or C1˜C5 alkyl group substituted with halogen atom, wherein n is an integer between 1 and 6.

Abstract: Disclosed herein is a cyclic dispersant having a rigid block which has a high affinity for carbon nanotubes, and a flexible block which has a high affinity for a solvent, with a linkage created therebetween. Having a structure that is advantageous with respect to adsorption to carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large amount of carbon nanotubes.

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.

Abstract: A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.

Abstract: A microcontact printing method using an imprinted nanostructure is provided, wherein the microcontact printing is introduced to a nanoimprint lithography process to pattern a self-assembled monolayer (SAM). The method includes forming a nanostructure on a substrate by using the nanoimprint lithography process; and patterning the nanostructure with the microcontact printing method. The operation of patterning includes: depositing a metal thin film on the nanostructure; contacting a plate with the nanostructure to selectively print the SAM on the nanostructure, wherein the SAM is inked on the plate and the metal thin film is deposited on the nanostructure; selectively removing the metal thin film by using the SAM as a mask; removing the SAM from the nanostructure; and patterning the substrate by using the remaining metal thin film on the nanostructure as a mask.

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

Abstract: This invention relates to a stackable clothes hanger comprising a hanging hook and a shoulder supporting part formed extendedly with inclination to right and left respectively from one end of said hanging hook for upholding the shoulder part of an upper garment, wherein the central part of said shoulder supporting part is formed with a hollow penetrating part as vertical penetration having a dimension that is equal to or larger than the size to have inserted a hanging hook of the same kind of clothes hanger and the inner plane of said shoulder supporting is formed with a receiving space capable of accepting at least a portion of the shoulder supporting part of the same kind of clothes hanger. With the configuration as such, structure for enabling a plurality of the clothes hangers to be stacked one over another is simplified so that productivity thereof might be enhanced and volume reducing effect thereof might be maximum when a plurality of such clothes hangers are stacked.

Abstract: A charge trap memory device according to example embodiments may include a tunnel insulating layer provided on a substrate. A charge trap layer may be provided on the tunnel insulating layer. A blocking insulating layer may be provided on the charge trap layer, wherein the blocking insulating layer may include a lanthanide (e.g., lanthanum). The blocking insulating layer may further include aluminum and oxygen, wherein the ratio of lanthanide to aluminum may be greater than 1 (e.g., about 1.5 to about 2). The charge trap memory device may further include a buffer layer provided between the charge trap layer and the blocking insulating layer, and a gate electrode provided on the blocking insulating layer.

Abstract: A storage node, phase change memory device having a storage node, a method of fabricating the phase change memory device and a method of operating the phase change memory device are provided. The phase change memory device includes a switching device and a storage node connecting to the switching device. The storage node includes a bottom electrode, a phase change layer formed on the bottom electrode, a material layer formed on the phase change layer and a top electrode formed on the phase change layer around the material layer.

Abstract: A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

Abstract: Provided are a phase change memory device and a method of fabricating the same. The phase change memory device including a phase change layer in a storage node thereof includes: a bottom electrode; a bottom electrode contact layer formed of a phase change material disposed on the bottom electrode; a first phase change layer having a smaller width than the bottom electrode contact layer, disposed on the bottom electrode contact layer; a second phase change layer having a larger width than the first phase change layer, disposed on the first phase change layer; and a upper electrode disposed on the second phase change layer.

Abstract: In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.