Abstract: A concentrating lens includes an incident surface, an emitting surface, and a reflective surface. The incident surface includes a central portion and an outer portion. The incident surface is formed by an inner surface of a depression portion. The reflective surface surrounds the emitting surface. The reflective surface extends so as to go toward a first side as going toward an outside. A first light incident on the outer portion of the incident surface transmits through the outer portion, is reflected by the reflective surface, reflected by the incident surface, and incident on the emitting surface. A second light incident on the central portion of the incident surface transmits through the central portion and is incident on the emitting surface. The central portion of the incident surface reflects the first light reflected by the reflective surface, toward the emitting surface and transmits the second light.

Abstract: A method for growing a single crystal according to a Czochralski method (CZ method) or a magnetic field applied CZ method (MCZ method), the method including: a first step of obtaining a melt by melting a silicon raw material loaded in a crucible; a second step of forming a solidified layer by solidifying a part of the melt; a third step of removing at least a part of the melt in a state where the solidified layer and the melt coexist; a fourth step of obtaining a melt by melting the solidified layer; and a fifth step of growing a silicon single crystal from the melt. Consequently, a method for purifying a silicon raw material and growing a single crystal on one CZ pulling apparatus and growing a single crystal with a reduced impurity concentration is provided.

Abstract: Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.

Abstract: The present invention provides a method of producing silicon carbide, comprising: providing a silicon-crystal producing apparatus with a carbon heater; forming a silicon carbide by-product on a surface of the carbon heater when a silicon crystal is produced from a silicon melt contained in a container heated by the carbon heater under a non-oxidizing atmosphere; and collecting the silicon carbide by-product to produce the silicon carbide. A method that can produce silicon carbide with low energy at low cost is thereby provided.

Abstract: The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal.

Abstract: The present invention provides a method for evaluating silicon single crystal wherein an amount ?[C] of carriers generated due to oxygen donors produced when a heat treatment is performed to the silicon single crystal is calculated and evaluated, the amount ?[C] being calculated from oxygen concentration [Oi] in the silicon single crystal, a temperature T of the heat treatment, a time t of the heat treatment, and an oxygen diffusion coefficient D(T) at the temperature T by using the following relational expression: ?[C]=?[Oi]5×exp(??·D(T)·[Oi]·t) (where ? and ? are constants). As a result, there is provided a method that enables evaluating an amount of carriers generated due to oxygen donors in silicon single crystal in a further versatile manner.

Abstract: The present invention provides a method for evaluating silicon single crystal wherein an amount ?[C] of carriers generated due to oxygen donors produced when a heat treatment is performed to the silicon single crystal is calculated and evaluated, the amount ?[C] being calculated from oxygen concentration [Oi] in the silicon single crystal, a temperature T of the heat treatment, a time t of the heat treatment, and an oxygen diffusion coefficient D(T) at the temperature T by using the following relational expression: ?[C]=?[Oi]5×exp(??·D(T)·[Oi]·t) (where ? and ? are constants). As a result, there is provided a method that enables evaluating an amount of carriers generated due to oxygen donors in silicon single crystal in a further versatile manner.

Abstract: A waste heat recovering and cooling apparatus for an engine includes a water pump that ejects cooling water of an engine; an EGR cooler that cools EGR gas introduced into an intake pipe from an exhaust pipe of the engine by using some of the cooling water ejected from the water pump; an EGR valve that opens and closes the channel of the EGR gas passing through the EGR cooler; and a transmission warmer that heats lubricating oil of a transmission by the cooling water passing through the EGR cooler.

Abstract: The present invention provides a silicon single crystal wafer sliced out from a silicon single crystal ingot grown by a Czochralski method, wherein the silicon single crystal wafer is sliced out from the silicon single crystal ingot having oxygen concentration of 8×1017 atoms/cm3 (ASTM' 79) or less and includes of a defect region where neither FPDs nor LEPs are detected by preferential etching but LSTDs are detected by an infrared scattering method. As a result, the wafer having the low oxygen concentration can be provided at low cost without causing a breakdown voltage failure or a leak failure at the time of fabricating a device.

Abstract: A single crystal production apparatus including: a crucible containing raw material melt; a heater heating the raw material melt; a cooling cylinder that is cooled forcedly by a cooling medium; and a cooling chamber that houses the crucible, the heater, and the cooling cylinder, wherein a heat-shielding member having a heat insulating material is disposed, near an interface between the raw material melt and a single crystal being pulled, in such a way as to surround the single crystal being pulled, the cooling cylinder is disposed above the heat-shielding member in such a way as to surround the single crystal being pulled, and a cooling-cylinder-peripheral heat insulator is disposed with a gap provided between the cooling-cylinder-peripheral heat insulator and a periphery of the cooling cylinder in such a way as to surround the cooling cylinder.

Abstract: Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.

Abstract: A waste heat recovering and cooling apparatus for an engine includes a water pump that ejects cooling water of an engine; an EGR cooler that cools EGR gas introduced into an intake pipe from an exhaust pipe of the engine by using some of the cooling water ejected from the water pump; an EGR valve that opens and closes the channel of the EGR gas passing through the EGR cooler; and a transmission warmer that heats lubricating oil of a transmission by the cooling water passing through the EGR cooler.

Abstract: The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal.