Abstract: The purpose of the present invention is to provide a fibrous piezoelectric element which enables a large electric signal to be drawn out by stress produced by relatively small deformation. A piezoelectric element includes a braid composed of a conductive fiber and a piezoelectric fiber. In the braid, the conductive fiber is a core, and the piezoelectric fiber is a covering fiber that covers the periphery of the conductive fiber.

Abstract: An ozone water production device (1) includes: flow rate controllers (4, 5) that each control a flow rate of gas which is a raw material; a flow rate meter (12) that measures a flow rate of water which is a raw material; a booster pump (13) that controls pressure of the water; an ozone water generating unit (8) that generates ozone water by mixing ozone gas and the water; and a pressure sensor (17) that measures pressure of the ozone water which is to be supplied to a use point (19). The booster pump (13) controls the pressure of the water such that the pressure of the ozone water measured by the pressure sensor (17) is constant. The flow rate controllers (4, 5) each control the flow rate of the gas in accordance with the flow rate of the water measured by the flow rate meter (12).

Abstract: A cleaning apparatus 1 is provided with a heating unit 5 that heats a cleaning surface of a substrate W, a cleaning unit 6 that supplies ozone water to the cleaning surface of the substrate W and cleans the cleaning surface and a control unit 7 that controls the heating of the cleaning surface and the supply of the cleaning liquid so as to clean the cleaning surface after heating the cleaning surface of the substrate W.

Abstract: Even when a tin-based polymerization catalyst and a phosphorus-based compound are present in a poly-L-lactic acid (A) and a poly-D-lactic acid (B), by using a specific proportion of an organic acid metal salt or an organic metal salt for stereocomplex crystallization, a stereocomplex polylactic acid composition having a high stereocomplex crystallinity and a high stereocomplex crystal melting point, a small stereocomplex crystal melting point depression even after remelting, a small decrease in the molecular weight, excellent forming processability, and also heat resistance can be provided.

Abstract: After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

Abstract: A solid-state imaging device includes a plurality of color filters, which are composed of a plurality of first color filters and a plurality of second color filters. In plan view: the first color filters and the second color filters are arranged alternatively in each of an X direction and a Y direction, and thus form a checkerboard pattern; and each of the first color filters, at a corner portion thereof, (i) has an oblique side that extends diagonally with respect to the X and Y directions, and (ii) is adjacent to another one of the first color filters that is located diagonally therefrom. Each one of the first color filters is partitioned from another one of the first color filters located diagonally therefrom and adjacent thereto at a corner portion by a shift portion of the barrier wall that extends in parallel with the oblique side.

Abstract: An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.

Abstract: An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.

Abstract: An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.

Abstract: To fabricate a Schottky barrier diode in which a decrease in on current due to parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is suppressed. The fabricating method includes the steps of forming an island-shape semiconductor film; doping the island-shape semiconductor film with a first impurity element to form a first impurity region; forming an insulating film so as to cover the island-shape semiconductor film; etching the insulating film to form a first opening and a second opening that partly expose the first impurity region; forming a mask over the insulating film so as to cover the first opening and expose the second opening; doping the first impurity region with a second impurity element to form a second impurity region; and forming a first wiring in contact with the first impurity region exposed at the first opening, and forming a second wiring in contact with the second impurity region exposed at the second opening.

Abstract: After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

Abstract: An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.

Abstract: A gas dissolved water producing apparatus includes a gas dissolving section, a gas channel for guiding a gas into the dissolving section, a first water channel for guiding water into the dissolving section, a gas dissolved water discharge channel, and a second water channel for guiding the water without passing through the dissolving section. The second water channel joins the gas dissolved water discharge channel to control the solution gas dissolved in the gas dissolved water can be controlled to a prescribed level of concentration.

Abstract: To fabricate a Schottky barrier diode in which a decrease in on current due to parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is suppressed. The fabricating method includes the steps of forming an island-shape semiconductor film; doping the island-shape semiconductor film with a first impurity element to form a first impurity region; forming an insulating film so as to cover the island-shape semiconductor film; etching the insulating film to form a first opening and a second opening that partly expose the first impurity region; forming a mask over the insulating film so as to cover the first opening and expose the second opening; doping the first impurity region with a second impurity element to form a second impurity region; and forming a first wiring in contact with the first impurity region exposed at the first opening, and forming a second wiring in contact with the second impurity region exposed at the second opening.

Abstract: A gas dissolved water producing apparatus includes a gas dissolving section, a gas channel for guiding a gas into the dissolving section, a first water channel for guiding water into the dissolving section, a gas dissolved water discharge channel, and a second water channel for guiding the water without passing through the dissolving section. The second water channel joins the gas dissolved water discharge channel to control the solution gas dissolved in the gas dissolved water can be controlled to a prescribed level of concentration.

Abstract: A gas dissolved water producing apparatus includes a gas dissolving section, a gas channel for guiding a gas into the dissolving section, a first water channel for guiding water into the dissolving section, a gas dissolved water discharge channel, and a second water channel for guiding the water without passing through the dissolving section. The second water channel joins the gas dissolved water discharge channel to control the solution gas dissolved in the gas dissolved water can be controlled to a prescribed level of concentration.

Abstract: The object of the present invention is to provide a gas dissolved water producing apparatus which can produce a gas dissolved water 31 having a concentration of a dissolved solution gas 3 not greater than a saturated concentration rapidly and efficiently.