Abstract: A method for manufacturing a wafer having a functional film, with an outer peripheral part of a top face of the wafer annularly exposed, the method including: spin-coating a high-viscosity coating material that contains a functional film constituent over the top face of the wafer to form a coating film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer and kept rotated to remove the coating film on the outer peripheral part of the top face of the wafer; subsequently, heating the coating film on the wafer to form a fluidity suppressed film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer having the fluidity suppressed film and kept rotated to remove the fluidity suppressed film on the top face of the wafer; and subsequently, heating the fluidity suppressed film on the wafer.

Abstract: A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for detecting impurities on a surface of a wafer for manufacturing semiconductors includes: a step for coating the surface of the wafer with a film-forming composition, and performing baking to form a film; and then a step for detecting impurities by means of a wafer inspection tool.

Abstract: A production method for an organic solvent that contains less metal impurities which when manufacturing a semiconductor device. This production method passes a liquid through a filter cartridge, wherein the filter cartridge is obtained by layering types of base cloths for filtration, wherein the base cloths for filtration are nonwoven fabric obtained by chemically bonding a metal adsorption group to polyolefin fibers, the base cloths for filtration include nonwoven fabric layer A and nonwoven fabric layer B, the nonwoven fabric layer A includes polyolefin fibers to which a sulfonate group is chemically bonded as a metal adsorption group, the nonwoven fabric layer B includes polyolefin fibers bonded thereto as a metal adsorption group at least one selected from the group consisting of an amino group, an N-methyl-D-glucamine group, an iminodiacetate group, an iminodiethanol group, an amidoxime group, a phosphate group, a carboxylate group, and an ethylene diamine triacetate group.

Abstract: A method for producing an ion-exchange resin having a water content of 5% by weight or less, a method for producing a lithography coating film forming-composition using the ion-exchange resin, and a method for washing the ion-exchange resin. The methods include the step of passing an organic solvent having a water content of 150 ppm or less through an ion-exchange resin precursor having a water content of 40% by weight or more, where a dehydration efficiency defined by the following equation is 5 or more: Dehydration efficiency=Dehydration rate (%)/[Weight of the organic solvent used per unit weight of the ion-exchange resin precursor (kg/kg)×Washing time (h)].

Abstract: A method for producing a coating film-forming composition for lithography, including a step for passing a liquid through a filter cartridge. The filter cartridge is obtained by layering more than one type of filtration base fabrics or winding same around a hollow inner tube, wherein: the fabrics are non-woven fabrics in which metal-adsorbing groups are chemically bonded to polyolefin fibers; the fabrics contain non-woven fabric layers A and B; layer A is configured from polyolefin fibers to which sulfonic acid groups are chemically bonded as metal-adsorbing groups; and layer B is configured from polyolefin fibers to which at least one type selected from among amino groups, N-methyl-D-glucamine groups, iminodiacetic acid groups, iminodiethanol groups, amidoxime groups, phosphoric acid groups, carboxylic acid groups and ethylenediamine triacetic acid groups chemically bonded as metal-adsorbing groups. Thus, the amount of metal impurities that are the cause of minute defects on a wafer can be reduced.

Abstract: There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.

Abstract: There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.

Abstract: A method for manufacturing a semiconductor device includes the steps of: forming an etching layer (17) formed of silicon on a semiconductor substrate (10); forming a mask layer (20) with a pattern on the etching layer (17), which includes an intermediate layer (22) as a silicon oxide film and a top layer (24) as a polysilicon; and etching the etching layer (17) using the mask layer (20) as a mask, and eliminating the top layer (24).

Abstract: A method for manufacturing a semiconductor device includes the steps of: forming an etching layer (17) formed of silicon on a semiconductor substrate (10); forming a mask layer (20) with a pattern on the etching layer (17), which includes an intermediate layer (22) as a silicon oxide film and a top layer (24) as a polysilicon; and etching the etching layer (17) using the mask layer (20) as a mask, and eliminating the top layer (24).

Abstract: A chemically amplified radiation sensitive resin composition comprising at least (1) a base resin that is an alkali-soluble resin or an alkali-insoluble or slightly alkali-soluble resin protected by an acid dissociable protecting group wherein the amount of an ultrahigh molecular weight component whose weight average molecular weight determined by polystyrene standards as measured by gel permeation chromatography with multi angle laser light scattering method is one million or more is 1 ppm or less, (2) a photo-acid generator capable of generating an acid by irradiation of radiation, and (3) a solvent. This radiation sensitive resin composition is applied onto an object to be processed 2 to form a photoresist film 3. The photoresist film is exposed and then developed to form a fine resist pattern 4 with 0.2 ?m or less in pattern width. Thereafter, dry etching is conducted to form a gate electrode, hole shape patterning or grooved shape patterning of a semiconductor device.