Patents by Inventor Suh Fei Lim
Suh Fei Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8643461Abstract: A device having a substrate and a dielectric layer disposed over the substrate is disclosed. The device includes a transformer layout disposed in the dielectric layer. The transformer layout includes an integrated transformer having primary and secondary coil elements. The first and second coil elements are configured to result in noise-self cancellation effect.Type: GrantFiled: April 28, 2011Date of Patent: February 4, 2014Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Chee Chong Lim, Johnny Kok Wai Chew, Suh Fei Lim, Wei Gao
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Publication number: 20120274434Abstract: A device having a substrate and a dielectric layer disposed over the substrate is disclosed. The device includes a transformer layout disposed in the dielectric layer. The transformer layout includes an integrated transformer having primary and secondary coil elements. The first and second coil elements are configured to result in noise-self cancellation effect.Type: ApplicationFiled: April 28, 2011Publication date: November 1, 2012Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Chee Chong LIM, Johnny Kok Wai CHEW, Suh Fei LIM, Wei GAO
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Patent number: 8242872Abstract: Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.Type: GrantFiled: July 19, 2007Date of Patent: August 14, 2012Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Chee Chong Lim, Kok Wai Chew, Kiat Seng Yeo, Suh Fei Lim, Manh Anh Do, Lap Chan
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Patent number: 8237531Abstract: An inductor circuit with high quality (Q) factor includes a primary inductor and a compensation sub-circuit. The compensation sub-circuit is electrically isolated from the primary inductor. The compensation sub-circuit is magnetically coupled with the primary inductor to compensate the loss in the primary inductor.Type: GrantFiled: December 31, 2007Date of Patent: August 7, 2012Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Ping Qiu, Chirn Chye Boon, Johnny Kok Wai Chew, Kiat Seng Yeo, Manh Anh Do, Lap Chan, Suh Fei Lim
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Patent number: 8003529Abstract: A method of forming an integrated circuit is disclosed. The method includes providing a substrate and forming on the substrate a shield structure comprising a shield member and a ground strap. The shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.Type: GrantFiled: January 25, 2010Date of Patent: August 23, 2011Assignee: Globalfoundries Singapore Pte. Ltd.Inventors: Suh Fei Lim, Kok Wai Chew, Sanford Shao-Fu Chu, Michael Chye Huat Cheng
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Publication number: 20100120244Abstract: A method of forming an integrated circuit is disclosed. The method includes providing a substrate and forming on the substrate a shield structure comprising a shield member and a ground strap. The shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.Type: ApplicationFiled: January 25, 2010Publication date: May 13, 2010Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.Inventors: Suh Fei LIM, Kok Wai CHEW, Sanford Shao-Fu CHU, Michael Chye Huat CHENG
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Patent number: 7652355Abstract: Embodiments of the invention provide an integrated circuit structure comprising: a substrate; a shield structure comprising a shield member and a ground strap formed on the substrate, wherein the shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.Type: GrantFiled: August 1, 2007Date of Patent: January 26, 2010Assignee: Chartered Semiconductor Manufacturing, Ltd.Inventors: Suh Fei Lim, Kok Wai Chew, Sanford Shao-Fu Chu, Michael Chye Huat Cheng
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Patent number: 7570144Abstract: An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.Type: GrantFiled: May 18, 2007Date of Patent: August 4, 2009Assignees: Chartered Semiconductor Manufacturing, Ltd., Nanyang Technological UniversityInventors: Chee Chong Lim, Kok Wai Chew, Kiat Seng Yeo, Suh Fei Lim, Manh Anh Do, Lap Chan
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Publication number: 20090167466Abstract: An inductor circuit with high quality (Q) factor includes a primary inductor and a compensation sub-circuit. The compensation sub-circuit is electrically isolated from the primary inductor. The compensation sub-circuit is magnetically coupled with the primary inductor to compensate the loss in the primary inductor.Type: ApplicationFiled: December 31, 2007Publication date: July 2, 2009Applicants: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD., NANYANG TECHNOLOGICAL UNIVERSITYInventors: Ping QIU, Chirn Chye BOON, Johnny Kok Wai CHEW, Kiat Seng YEO, Manh Anh DO, Lap CHAN, Suh Fei LIM
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Publication number: 20080284553Abstract: Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5 p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.Type: ApplicationFiled: July 19, 2007Publication date: November 20, 2008Applicants: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD., NANYANG TECHNOLOGICAL UNIVERSITYInventors: Chee Chong LIM, Kok Wai CHEW, Kiat Seng YEO, Suh Fei LIM, Manh Anh DO, Lap CHAN
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Publication number: 20080284552Abstract: An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.Type: ApplicationFiled: May 18, 2007Publication date: November 20, 2008Applicants: Chartered Semiconductor Manufacturing, Ltd., Nanyang Technological UniversityInventors: Chee Chong Lim, Kok Wai Chew, Kiat Seng Yeo, Suh Fei Lim, Manh Anh Do, Lap Chan
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Publication number: 20070268093Abstract: Embodiments of the invention provide an integrated circuit structure comprising: a substrate; a shield structure comprising a shield member and a ground strap formed on the substrate, wherein the shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.Type: ApplicationFiled: August 1, 2007Publication date: November 22, 2007Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.Inventors: Suh Fei LIM, Kok Wai CHEW, Sanford CHU, Michael CHENG