Abstract: A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.

Abstract: Embodiments of the invention include a heated load lock chamber. In one embodiment, a heated load lock chamber includes a chamber body having a plurality of lamp assembles disposed at least partially therein. Each lamp assembly includes a transmissive tube housing a lamp. The transmissive tube extends into the chamber body and provides a pressure barrier isolating the lamp from the interior volume of the load lock chamber. In another embodiment, an open end of the transmissive tube extends through a sidewall of the chamber body. A closed end of the transmissive tube is surrounded by the interior volume of the chamber body and is supported below a top of the chamber body in a spaced apart relation. The open end of the tube is sealed to the sidewall of the chamber body such that the interior of the tube is open to atmosphere.

Abstract: Embodiments of the invention include a load lock chamber having a decoupled slit valve door seal compartment. In one embodiment, a load lock chamber includes a main assembly, a first slit valve door seal compartment and a seal assembly. The main assembly has a substrate transfer cavity formed therein. Two substrate access ports are formed through the main assembly and fluidly couple to the cavity. The first slit valve door seal compartment has an aperture disposed adjacent to and aligned with one of the access ports. The first slit valve door seal compartment is decoupled from the main assembly. The seal assembly couples the first slit valve door seal compartment to the main assembly.

Abstract: Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.

Abstract: A method and apparatus for forming solar panels from n-doped silicon, p-doped silicon, intrinsic amorphous silicon, and intrinsic microcrystalline silicon using a cluster tool is disclosed. The cluster tool comprises at least one load lock chamber and at least one transfer chamber. When multiple clusters are used, at least one buffer chamber may be present between the clusters. A plurality of processing chambers are attached to the transfer chamber. As few as five and as many as thirteen processing chambers can be present.

Abstract: Embodiments of the invention include a load lock chamber, a processing system having a load lock chamber and a method for transferring substrates between atmospheric and vacuum environments. In one embodiment, the method includes maintaining a processed substrate within a transfer cavity formed in a chamber body for two venting cycles. In another embodiment, the method includes transferring a substrate from a transfer cavity to a heating cavity formed in the chamber body, and heating the substrate in the heating cavity. In another embodiment, a load lock chamber includes a chamber body having substrate support disposed in a transfer cavity. The substrate support is movable between a first elevation and a second elevation. A plurality of grooves are formed in at least one of a ceiling or floor of the transfer cavity and configured to receive at least a portion of the substrate support when located in the second elevation.

Abstract: Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.

Abstract: Systems, methods, and apparatus are provided for including a chip embedded in components of electronic device manufacturing systems adapted to sense, store, and/or update at least one of identification, operational-related and process-related information associated with the components. In other aspects of the invention, a processing chamber component having an embedded chip with storage capacity is adapted to record at least one of identification, operational-related and process-related information associated with the component; and to communicate the information from the chip to enable determination of an operational state of the component. Numerous other aspects are disclosed.

Abstract: Embodiments of the invention include a chamber body having at least one of a top or bottom decoupled from the sidewalls of the chamber body. The invention is suitable for use as a load lock chamber, substrate transfer chamber and vacuum processing chambers, among others.

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.

Abstract: Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.

Abstract: In certain aspects, a plasma chamber is provided that has (1) a chamber size of at least about 1.8 by 2.0 meters; and (2) an effective inductance having an inductive reactance of not more than about 12-15 ohms. The plasma chamber may be used, for example, to process substrates used for flat panel displays. Numerous other aspects are provided.

Abstract: In certain embodiments, an apparatus for providing a fixed impedance transformation network for driving a plasma chamber includes a pre-match network adapted to couple between an Active RF match network and a plasma chamber load associated with the plasma chamber. The pre-match network includes (1) a first capacitive element; (2) an inductive element connected in parallel with the first capacitive element to form a parallel circuit that presents a stepped-up impedance to an output of the Active RF match network such that a voltage required to drive the plasma chamber load is reduced; and (3) a second capacitive element coupled to the parallel circuit and adapted to couple to the plasma chamber load. The second capacitive element reduces or cancels at least in part a reactance corresponding to an inductance associated with the plasma chamber load. Numerous other aspects are provided.

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.

Abstract: An apparatus for supporting a substrate within a processing chamber is provided. In one aspect, a substrate support member is provided comprising a housing having a bore formed therethrough, a support pin at least partially disposed within the bore, and a plurality of bearing elements disposed about the housing. In one aspect, the bearing elements comprise a roller having a central bore formed therethrough, a contoured outer surface, and a shaft at least partially disposed through the central bore. In another aspect, the bearing elements comprise a ball assembly comprising a larger spherical member and four smaller spherical members arranged about the larger spherical member.

Abstract: An apparatus for supporting a substrate within a processing chamber is provided. In one aspect, a substrate support member is provided comprising a housing having a bore formed therethrough, a support pin at least partially disposed within the bore, and a plurality of bearing elements disposed about the housing. In one aspect, the bearing elements comprise a roller having a central bore formed therethrough, a contoured outer surface, and a shaft at least partially disposed through the central bore. In another aspect, the bearing elements comprise a ball assembly comprising a larger spherical member and four smaller spherical members arranged about the larger spherical member.

Abstract: A method and apparatus for supporting a substrate is generally provided. In one aspect, an apparatus for supporting a substrate includes a support plate having a first body disposed proximate thereto. A first pushing member is radially coupled to the first body and adapted to urge the substrate in a first direction parallel to the support plate when the first body rotates. In another aspect, a load lock chamber having a substrate support that supports a substrate placed thereon includes a cooling plate that is moved to actuate at least one alignment mechanism. The alignment mechanism includes a pushing member that urges the substrate in a first direction towards a center of the support. The pushing member may additionally rotate about an axis perpendicular to the first direction.

Abstract: A method and apparatus for supporting a substrate is generally provided. In one aspect, an apparatus for supporting a substrate includes a support plate having a first body disposed proximate thereto. A first pushing member is radially coupled to the first body and adapted to urge the substrate in a first direction parallel to the support plate when the first body rotates. In another aspect, a load lock chamber having a substrate support that supports a substrate placed thereon includes a cooling plate that is moved to actuate at least one alignment mechanism. The alignment mechanism includes a pushing member that urges the substrate in a first direction towards a center of the support. The pushing member may additionally rotate about an axis perpendicular to the first direction.

Abstract: A method and apparatus for supporting a substrate is generally provided. In one aspect, an apparatus for supporting a substrate includes a support plate having a first body disposed proximate thereto. A first pushing member is radially coupled to the first body and adapted to urge the substrate in a first direction parallel to the support plate when the first body rotates. In another aspect, a load lock chamber having a substrate support that supports a substrate placed thereon includes a cooling plate that is moved to actuate at least one alignment mechanism. The alignment mechanism includes a pushing member that urges the substrate in a first direction towards a center of the support. The pushing member may additionally rotate about an axis perpendicular to the first direction.