Abstract: A circuit includes a bandgap circuit configured to generate multiple reference voltages. A first voltage glitching detection circuit utilizes a first one of the reference voltages and a first power rail to generate a first reset signal in response to a voltage glitching attack on the first power rail, and a second voltage glitching detection circuit operates independently of the reference voltages to generate a second reset signal in response to the voltage glitching attack on the first power rail.

Abstract: Introduced herein is a technique that reliably measures on-die noise of logic in a chip. The introduced technique places a noise measurement system in partitions of the chip that are expected to cause the most noise. The introduced technique utilizes a continuous free-running clock that feeds functional frequency to the noise measurement circuit throughout the noise measurement scan test. This allows the noise measurement circuit to measure the voltage noise of the logic during a shift phase, which was not possible in the conventional noise measurement method. Also, by being able to measure the voltage noise during a shift phase and hence in both phases of the scan test, the introduced technique can perform a more comprehensive noise measurement not only during ATE testing but as part of IST in the field.

Abstract: A method of determining electrical characteristics of material local to a specific area of a semiconductor wafer is disclosed. In one embodiment, the method comprises sinking or sourcing current through at least one selected device under test (DUT) on the semiconductor wafer, converting the current sourcing or sinking through the selected DUT (IDUT) into a voltage, comparing the converted voltage against a linear voltage ramp, generating an output clock based on the comparison, and measuring a duty cycle of the output clock. In one embodiment, IDUT is sourced or sinked using regulated drain-to-source voltages (VDS) across the selected DUT, the duty cycle of the output clock dependent on the amount of current sinking or sourcing through the selected DUT, and electrical characteristics of the material local to the specific area of the semiconductor wafer where the DUT is located are determined based on the duty cycle of the output clock.

Abstract: Circuits that include one or more transmission lines to propagate a signal through a serially-arranged plurality of repeaters, and one or more control circuits to propagate control pulses to the repeaters, wherein a timing and duration of the control pulses is configured to operate the repeaters in current-mode signaling (CMS) mode during a state transition of the signal at the repeaters and to operate the repeaters in voltage-mode signaling (VMS) mode otherwise.

Abstract: Circuitry and a method of determining electrical characteristics of material local to a specific area of a semiconductor wafer. In one embodiment, the method includes sinking or sourcing current through a selected on of a plurality of devices under test (DUTs) on the semiconductor wafer, converting the current sourcing or sinking into a voltage, comparing the converted voltage against a linear voltage ramp, generating an output clock based on the comparison, and measuring a duty cycle of the output clock. In one embodiment, the duty cycle of the output clock is dependent on the current sinking or sourcing through the selected at least one of the plurality of DUTs on the wafer and electrical characteristics of material local to the specific area of the wafer where the selected one of the plurality of DUTs is located are determined based on the duty cycle of the output clock.

Abstract: Circuitry and a method of determining electrical characteristics of material local to a specific area of a semiconductor wafer is disclosed. In one embodiment, an IC is disclosed that comprises at least one processing subsystem and at least one integrated common current monitor (ICCM) located within the processing subsystem(s). In one embodiment, the ICCM includes current-to-voltage conversion circuitry that converts a current throughput (IDUT) of a selected at least one of the plurality of DUTs to a corresponding voltage for a plurality of regulated drain-to-source voltages (VDS) across the selected DUT(s). In one embodiment, the ICCM is configured to determine a duty cycle of a voltage that corresponds to the IDUT and IDUT represents electrical characteristics of material local to an area of a semiconductor wafer specific to a location where the ICCM is located.

Abstract: Circuits that include one or more transmission lines to propagate a signal through a serially-arranged plurality of repeaters, and one or more control circuits to propagate control pulses to the repeaters, wherein a timing and duration of the control pulses is configured to operate the repeaters in current-mode signaling (CMS) mode during a state transition of the signal at the repeaters and to operate the repeaters in voltage-mode signaling (VMS) mode otherwise.

Abstract: A circuit includes a bandgap circuit configured to generate multiple reference voltages. A first voltage glitching detection circuit utilizes a first one of the reference voltages and a first power rail to generate a first reset signal in response to a voltage glitching attack on the first power rail, and a second voltage glitching detection circuit operates independently of the reference voltages to generate a second reset signal in response to the voltage glitching attack on the first power rail.

Abstract: Circuitry and a method of determining electrical characteristics of material local to a specific area of a semiconductor wafer is disclosed. In one embodiment, the method includes sinking or sourcing current through a selected on of a plurality of devices under test (DUTs) on the semiconductor wafer, converting the current sourcing or sinking into a voltage, comparing the converted voltage against a linear voltage ramp, generating an output clock based on the comparison, and measuring a duty cycle of the output clock. In one embodiment, the duty cycle of the output clock is dependent on the current sinking or sourcing through the selected at least one of the plurality of DUTs on the wafer and electrical characteristics of material local to the specific area of the wafer where the selected one of the plurality of DUTs is located are determined based on the duty cycle of the output clock.

Abstract: Circuitry and a method of determining electrical characteristics of material local to a specific area of a semiconductor wafer is disclosed. In one embodiment, an IC is disclosed that comprises at least one processing subsystem and at least one integrated common current monitor (ICCM) located within the processing subsystem(s). In one embodiment, the ICCM includes current-to-voltage conversion circuitry that converts a current throughput (IDUT) of a selected at least one of the plurality of DUTs to a corresponding voltage for a plurality of regulated drain-to-source voltages (VDS) across the selected DUT(s). In one embodiment, the ICCM is configured to determine a duty cycle of a voltage that corresponds to the IDUT and IDUT represents electrical characteristics of material local to an area of a semiconductor wafer specific to a location where the ICCM is located.

Abstract: Circuits that include one or more transmission lines to propagate a signal through a serially-arranged plurality of repeaters, and one or more control circuits to propagate control pulses to the repeaters, wherein a timing and duration of the control pulses is configured to operate the repeaters in current-mode signaling (CMS) mode during a state transition of the signal at the repeaters and to operate the repeaters in voltage-mode signaling (VMS) mode otherwise.

Abstract: In various embodiments, a comparison circuit compares voltages within an integrated circuit. The comparison circuit includes a comparison capacitor, an inverter, and multiple switches. A first terminal of the comparison capacitor is coupled to both a first terminal of a first switch and a first terminal of a second switch. A second terminal of the comparison capacitor is coupled to both a first terminal of a third switch and an input of the inverter. An output of the inverter is coupled to both a second terminal of the third switch and a first terminal of a fourth switch. A second terminal of the fourth switch is coupled to a first terminal of a fifth switch and a first output of the comparison circuit. At least a portion of the switches are turned on during a comparison model and are turned off during a reset mode.

Abstract: In various embodiments, a comparison circuit compares voltages within an integrated circuit. The comparison circuit includes a comparison capacitor, an inverter, and multiple switches. A first terminal of the comparison capacitor is coupled to both a first terminal of a first switch and a first terminal of a second switch. A second terminal of the comparison capacitor is coupled to both a first terminal of a third switch and an input of the inverter. An output of the inverter is coupled to both a second terminal of the third switch and a first terminal of a fourth switch. A second terminal of the fourth switch is coupled to a first terminal of a fifth switch and a first output of the comparison circuit. At least a portion of the switches are turned on during a comparison model and are turned off during a reset mode.

Abstract: Introduced herein is a technique that reliably measures on-die noise of logic in a chip. The introduced technique places a noise measurement system in partitions of the chip that are expected to cause the most noise. The introduced technique utilizes a continuous free-running clock that feeds functional frequency to the noise measurement circuit throughout the noise measurement scan test. This allows the noise measurement circuit to measure the voltage noise of the logic during a shift phase, which was not possible in the conventional noise measurement method. Also, by being able to measure the voltage noise during a shift phase and hence in both phases of the scan test, the introduced technique can perform a more comprehensive noise measurement not only during ATE testing but as part of IST in the field.

Abstract: In various embodiments, a current measurement circuit measures an input current within an integrated circuit. The current measurement circuit includes an integration capacitor, an operational amplifier, a comparison capacitor, an inverter, and multiple switches. The current measurement circuit is coupled to a clocking circuit that, during operation, generates a two-phase clock having a frequency that is proportional to the input current. At least a portion of the switches are turned on during a first phase of the two-phase clock and are turned off during a second phase of the two-phase clock.