Abstract: Methods and devices for determining a temperature of a substrate during processing are provided herein. Embodiments include extracting modes from a virtual model of thermal conditions within a processing chamber. Embodiments further include receiving thermal sensor data associated with a target substrate. Embodiments further include using compressed sensing to generate a thermal map for the target substrate based on the thermal sensor data and the extracted modes.

Abstract: Embodiments described herein relate to an apparatus that includes a housing with an opening, and a plurality of grids within the housing that are arranged in a vertical stack. In an embodiment, a collector plate is provided below the plurality of grids within the housing, and a magnetic module is adjacent to the opening.

Abstract: Some embodiments described herein relate to a method of calibrating a device sensor that includes inserting a reference sensor into a calibration system. In an embodiment, the calibration system includes a light source, and a photonic detector. In an embodiment, the method further includes measuring a reference transmission value of an amount of light from the light source that is transmitted through the reference sensor towards the photonic detector, and inserting the device sensor into the calibration system. In an embodiment, the method further includes measuring a transmission value of the amount of light from the light source that is transmitted through the device sensor towards the photonic detector, and calculating a scaling factor for the device sensor. In an embodiment, the scaling factor equalizes the transmission value of the device sensor to the reference transmission value of the reference sensor.

Abstract: Embodiments herein are generally directed to systems and methods for removing metal oxide layers for back-end-of-line processes. A substrate processing system includes a processing chamber configured to generate a plasma within the processing chamber, a substrate electrode embedded within a substrate support assembly disposed within the processing chamber, a radio frequency (RF) generator assembly coupled to the substrate electrode, and a controller. The controller is configured to flow a cleaning gas over a surface of a substrate support disposed within a processing chamber and generate a radio frequency (RF) pulsed bias that delivers an RF waveform for a first portion of a pulse period and halts the delivery of the RF waveform for a second portion of the pulse period and apply the RF pulsed bias to the substrate electrode while the plasma is present in the processing chamber.

Abstract: In some embodiments, a physical vapor deposition apparatus includes a top flux optimizer configured to be biased. The physical vapor deposition apparatus further includes an intermediate flux optimizer configured to be biased. The top flux optimizer and the intermediate flux optimizer are separated by a first distance. The physical vapor deposition apparatus further includes a bottom flux optimizer configured to be biased. The bottom flux optimizer and the intermediate flux optimizer are separated by a second distance. The physical vapor deposition apparatus further includes a top power source coupled to the top flux optimizer, an intermediate power source coupled to the intermediate flux optimizer, and a bottom power source coupled to the bottom flux optimizer.

Abstract: Embodiments of process chambers having a collimator are provided herein. In some embodiments, a process chamber includes: a chamber body having sidewalls and a top plate to define an interior volume therein, the top plate configured to support a target in the interior volume; a substrate support disposed in the interior volume opposite the top plate; a collimator disposed in the interior volume between the top plate and the substrate support; and a lower shield disposed in the interior volume about the collimator and coupled to the chamber body at a location below an upper surface of the collimator via a ceramic spacer disposed between the lower shield and the chamber body configured to electrically decouple the lower shield from the chamber body.

Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.