Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs in a bottom-emitting configuration, and multiple VCSELs, of the plurality of VCSELs, may be grouped in a cluster. The emitter assembly may include a carrier, and the VCSEL chip may be in a flip chip configuration with the carrier. The emitter assembly may include a conductive pillar electrically connected to the multiple VCSELs grouped in the cluster.

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs respectively associated with a plurality of first electrical contacts. A first spacing of the plurality of first electrical contacts may define a first pitch. The emitter assembly may include a redistribution layer, disposed on the VCSEL chip, to increase the first pitch of the plurality of first electrical contacts. The emitter assembly may include a carrier having a plurality of second electrical contacts. A second spacing of the plurality of second electrical contacts may define a second pitch greater than the first pitch. The emitter assembly may include a plurality of conductive pillars that electrically connect the plurality of first electrical contacts and the plurality of second electrical contacts via the redistribution layer. The plurality of conductive pillars may be arranged according to the second spacing.

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs. The emitter assembly may include a plurality of conductive pillars electrically connected to the VCSEL chip. The emitter assembly may include a dummy pillar, electrically isolated from the VCSEL chip, mating with a slot. The VCSEL chip may include one of the dummy pillar or the slot.

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs. The emitter assembly may include a plurality of conductive pillars electrically connected to the VCSEL chip, and a conductive pillar, of the plurality of conductive pillars, may have a solder cap at an end of the conductive pillar. The emitter assembly may include a pin extending into the solder cap.

Abstract: A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.

Abstract: A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.

Abstract: A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.