Abstract: The present disclosure relates to a temperature sensor circuit for measuring temperature change inside a pixel of a high-brightness active matrix micro-light-emitting diode (micro-LED) display, and a display apparatus including the temperature sensor circuit. The temperature sensor circuit according to one embodiment of the present disclosure includes a first thin film transistor, a second thin film transistor interconnected with the first thin film transistor, and a temperature measurement unit for measuring temperature based on an output voltage according to difference in off current between the first thin film transistor and the second thin film transistor.

Abstract: Disclosed is a method of fabricating an oxide semiconductor thin-film transistor, the method including a step of forming an oxide semiconductor layer including a channel region, a source region, and a drain region on a substrate; a step of forming a gate insulating layer on the channel region; a step of forming a gate electrode on the gate insulating layer; and a step of forming a source electrode and a drain electrode on the source and drain regions, respectively, wherein the step of forming an oxide semiconductor layer includes a step of selectively plasma-treating the source and drain regions of the oxide semiconductor layer with a fluorine (F)-based gas, and the source and drain regions contain fluorine (F) at a concentration of 2×1014/cm3 to 17.5×1021/cm3.

Abstract: Disclosed are an oxide semiconductor thin film transistor and a method of fabricating the same. An oxide semiconductor thin film transistor according to an embodiment of the present disclosure includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator; source and drain electrodes formed by depositing carbon nanotubes (CNTs) and a metal electrode on the formed the oxide semiconductor layer and patterning the deposited CNTs and metal electrode such that the source electrode and the drain electrode are spaced apart from each other; and a passivation layer formed on the formed source and drain electrodes, wherein the source and drain electrodes serve to prevent diffusion of a metal of the metal electrode into the formed oxide semiconductor layer, due to the CNTs of the source and drain electrodes.

Abstract: Disclosed is a method of fabricating an oxide semiconductor thin-film transistor, the method including a step of forming an oxide semiconductor layer including a channel region, a source region, and a drain region on a substrate; a step of forming a gate insulating layer on the channel region; a step of forming a gate electrode on the gate insulating layer; and a step of forming a source electrode and a drain electrode on the source and drain regions, respectively, wherein the step of forming an oxide semiconductor layer includes a step of selectively plasma-treating the source and drain regions of the oxide semiconductor layer with a fluorine (F)-based gas, and the source and drain regions contain fluorine (F) at a concentration of 2×1014/cm3 to 17.5×1021/cm3.

Abstract: The present disclosure relates to a temperature sensor circuit for measuring temperature change inside a pixel of a high-brightness active matrix micro-light-emitting diode (micro-LED) display, and a display apparatus including the temperature sensor circuit. The temperature sensor circuit according to one embodiment of the present disclosure includes a first thin film transistor, a second thin film transistor interconnected with the first thin film transistor, and a temperature measurement unit for measuring temperature based on an output voltage according to difference in off current between the first thin film transistor and the second thin film transistor.

Abstract: Disclosed are an oxide semiconductor thin film transistor and a method of fabricating the same. An oxide semiconductor thin film transistor according to an embodiment of the present disclosure includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator; source and drain electrodes formed by depositing carbon nanotubes (CNTs) and a metal electrode on the formed the oxide semiconductor layer and patterning the deposited CNTs and metal electrode such that the source electrode and the drain electrode are spaced apart from each other; and a passivation layer formed on the formed source and drain electrodes, wherein the source and drain electrodes serve to prevent diffusion of a metal of the metal electrode into the formed oxide semiconductor layer, due to the CNTs of the source and drain electrodes.

Abstract: An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.

Abstract: An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.