Abstract: A laser comprises a first contact to receive an active region control signal, a second contact to receive an optical absorber control signal, and a sandwich of distributed Bragg reflector mirror stacks. Each distributed Bragg reflector mirror stack has an alternate doping with respect to an adjacent distributed Bragg reflector mirror stack. An active region is positioned in the sandwich to provide optical gain in response to the active region control signal. An optical absorber is positioned in the sandwich. The optical absorber has wavelength dependent absorption in response to the optical absorber control signal. The device of the invention may be utilized as an integrated detector, a self-pulsating laser, a high speed intracavity modulator, or an optical pick-up device.

Abstract: A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers.