Abstract: SUMMARY OF THE INVENTION The present invention relates to novel indirubin derivatives having heterobicyclic moieties, and use thereof as fms-like tyrosine kinase 3 (FLT3) and rearranged during transfection (RET) kinase inhibitors. The compound of the present invention effectively inhibits the activity of FLT3 and RET kinases, and thus may be useful for preventing or treating mutant FLT3 and mutant RET-related diseases, particularly acute myeloid leukemia.

Abstract: The present invention relates to a cosmetic composition comprising a fermented chestnut husk extract or a fraction thereof as an active ingredient. The fermented chestnut husk extract or fraction thereof according to the present invention can be used to provide a cosmetic composition that exhibits an increased total phenolic content, high antioxidative activity, and excellent skin whitening and wrinkle reduction due to the fermentation, extraction, and fractionation processes thereof.

Abstract: A method of forming metal wirings for a semiconductor device. A first etch stop layer, an dielectric layer, a second etch stop layer, and a wiring layer are deposited on a semiconductor substrate. A hole is formed by etching the wiring layer, the first etch stop layer, and the dielectric layer. A trench is formed by etching the wiring layer. The exposed first and second etch stop layers are removed after removal of the trench pattern. A barrier metal layer is deposited on inner walls of the hole and the trench. Grooves are formed on the barrier metal layer. A metal seed layer is deposited on the barrier metal layer. A metal thin layer is deposited inside the hole and the trench. The metal thin layer, the metal seed layer, and the barrier metal layer on the wiring layer are removed.

Abstract: Disclosed is a method for forming contacts of a semiconductor device. In accordance with the invention, an oxidized silicon-rich nitride film is used as an etch barrier film for a self-aligned contact (SAC) process. Accordingly, the oxidized silicon-rich nitride film exhibits less stress, as compared to an LPCVD nitride film, thereby being capable of avoiding a degradation in the characteristics of the devices finally produced or distortion of the wafer used. There is no formation of cracks occurring in the nitride film during a subsequent thermal process. It is also unnecessary to conduct an additional reflection preventing process. Accordingly, the entire process is simplified. It is also possible to improve a decrease in the operating speed of the devices due to a parasitic capacitance existing among conductive lines because the oxidized silicon-rich nitride film has a low dielectric constant, as compared to nitride films.