Abstract: A method for forming a stacked transistor device is disclosed, in which a nanosheet field-effect transistor (FET) structure and a fin FET structure are formed. The method comprises forming a first fin structure and a second fin structure from a vertical stack, wherein the second fin structure is arranged above the first fin structure, and wherein the vertical stack comprises a middle layer arranged between the first and second fin structures. The method further comprises forming, from above, a gate structure across a channel region of the second fin structure, forming, from below, a gate structure across a channel region of the first fin structure, and forming source and drain regions for the first and second fin structures.

Abstract: In one aspect, a method of forming a semiconductor device including a plurality of stacked transistor devices having a bottom transistor device and a top transistor device can include: forming a plurality of parallel fin structures on a substrate; forming a sacrificial gate across the fin structures; forming bottom source/drain bodies for each bottom transistor device by epitaxy; forming a bottom dummy contact layer covering the bottom source/drain bodies; forming top source/drain bodies for each top transistor device over the bottom dummy contact layer by epitaxy; depositing an insulating material over the bottom dummy contact layer and the top source/drain bodies; replacing the sacrificial gate with a functional gate stack by a replacement metal gate process; patterning holes extending through the insulating material, with each hole exposing an upper surface portion of the bottom dummy contact layer; replacing the bottom dummy contact layer with one or more contact metals, which can include etching the dumm

Abstract: The disclosed method includes forming an initial layer stack comprising a sacrificial layer of a first semiconductor material and over the sacrificial layer a channel layer of a second semiconductor material, forming a fin structures by patterning trenches in the initial layer stack, forming an anchoring structure extending across the fin structures, and while the channel layers are anchored by the anchoring structure: removing the sacrificial layers by a selective etching of the first semiconductor material, thereby forming a longitudinal cavity underneath the channel layer of each fin structure, and depositing an insulating material to fill the cavities, wherein the insulating material is formed of a flowable dielectric, and subsequently recessing the at least one anchoring structure and the insulating material to a level below the cavities such that the insulating material remains in the cavities to form insulating layers underneath the channel layers of each fin structure.

Abstract: A method for forming a first transistor structure from a first channel layer and a second transistor structure from a second channel layer is disclosed. The first channel layer and the second channel layer are vertically stacked on a substrate. The method includes processing the first transistor structure from above, followed by processing the second transistor structure from the backside.