Patents by Inventor Suk-bae Jun

Suk-bae Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device which controls sense amplifier for detecting bit line bridge and method of controlling the semiconductor memory device
    Patent number: 6396754
    Abstract: In a sense amplifier control circuit and method for a semiconductor memory device, a row address strobe (RAS) signal delay unit delays a RAS signal for a predetermined period of time. A sense amplifier control signal generator generates first and second sense amplifier control signals, responsive to the delayed RAS signal and a test mode control signal, which are enabled at the same time or at different periods depending on operation modes of the memory device. First and second sense amplifiers respectively sense and amplify the potential of odd-numbered and even-numbered bit line pairs of the memory device, responsive to the first and second sense amplifier control signals. The probability and accuracy of detecting bit line bridge defects are increased, because the times for sensing two adjacent bit lines are different.
    Type: Grant
    Filed: July 10, 2001
    Date of Patent: May 28, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyong-yong Lee, Suk-bae Jun, Choong-sun Park
  • Semiconductor memory device which controls sense amplifier for detecting bit line bridge and method of controlling the semiconductor memory device
    Publication number: 20020033723
    Abstract: In a sense amplifier control circuit and method for a semiconductor memory device, a row address strobe (RAS) signal delay unit delays a RAS signal for a predetermined period of time. A sense amplifier control signal generator generates first and second sense amplifier control signals, responsive to the delayed RAS signal and a test mode control signal, which are enabled at the same time or at different periods depending on operation modes of the memory device. First and second sense amplifiers respectively sense and amplify the potential of odd-numbered and even-numbered bit line pairs of the memory device, responsive to the first and second sense amplifier control signals. The probability and accuracy of detecting bit line bridge defects are increased, because the times for sensing two adjacent bit lines are different.
    Type: Application
    Filed: July 10, 2001
    Publication date: March 21, 2002
    Inventors: Hyong-yong Lee, Suk-bae Jun, Choong-sun Park