Abstract: A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating pump connected to the main pipe and the outer tank for circulating a cleansing solution from the outer tank, through the main pipe, the jet nozzles, and the cleaning tank, and a filter for filtering the circulated cleansing solution.

Abstract: A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating pump connected to the main pipe and the outer tank for circulating a cleansing solution from the outer tank, through the main pipe, the jet nozzles, and the cleaning tank, and a filter for filtering the circulated cleansing solution.

Abstract: A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating pump connected to the main pipe and the outer tank for circulating a cleansing solution from the outer tank, through the main pipe, the jet nozzles, and the cleaning tank, and a filter for filtering the circulated cleansing solution.

Abstract: A method of manufacturing a semiconductor device, which is designed to enhance the characteristic of a dual-gate MOS by reducing the phase difference between two gate electrodes, includes the steps of: forming a first conductivity type substrate in which a portion to be first and second gate electrodes are defined; sequentially forming a gate insulating layer and a conductive coating on the substrate; ion-implanting first conductivity type impurities into the conductive coating of a portion where the first gate electrode will be formed; ion-implanting second conductivity type impurities into the conductive coating of a portion where the second gate electrode will be formed; selectively etching the conductive coating, leaving only a portion doped with the first and second conductivity type impurities, and forming the first and second gate electrodes; and forming impurity regions in the surface of the substrate on both sides of the first and second gate electrodes.

Abstract: A multi-step dry-etching method that sequentially employs plasma etching and reactive ion etching process steps to form the pairs of adjacent, doped polysilicon gate electrodes of a twin-well CMOS device. The initial dry-etching process step uses to best advantage the speed of plasma etching to rapidly form pairs of adjacent p- and n-type gate-precursor features with substantially vertical sidewalls from the upper 50-80% of a doped polysilicon layer which lies on an insulating film. The gate-precursor features and, subsequently, the gate electrodes are formed from pairs of adjacent p- and n-type regions within the doped polysilicon layer which lie over pairs of adjacent n- and p-wells (the twin wells of the CMOS device), respectively, within a substrate. The subsequent dry-etching process step uses reactive ion etching to complete the formation of the pairs of adjacent, doped polysilicon gate electrodes from the remaining 50-20% of the etched, doped polysilicon layer without over-etching the insulating film.

Abstract: A semiconductor wafer wet processing device which includes a chamber, a process tank body containing walls and disposed within the chamber, and defining a channel therebetween, at least one of the walls of the process tank body containing a plurality of apertures for providing lateral access between the channel and the interior of the process tank body, a wafer-carrying device disposed within the process tank body, an inlet for introducing a processing liquid into the channel and an outlet for removing the processing liquid from the interior of the process tank body, wherein upon the introduction of the processing liquid through the inlet into the channel, the processing liquid flows over the top of the walls of the process tank body into the interior thereof and laterally through the apertures in the walls of the process tank body for treating the contents thereof and is removed through the outlet.

Abstract: A system and method for cleaning semiconductor wafers, includes an internal cleaning tank having an outlet and a cassette for holding wafers, and a device disposed near the outlet of the internal cleaning tank for releasing a cleaning solution so as to increase a flow rate of the cleaning solution by creating a spiral flow of the cleaning solution, an external cleaning tank having an intake through which the cleaning solution is supplied to clean the wafers in the internal cleaning tank, a circulating pipe for connecting the outlet to the intake, a circulating pump formed in the middle section of the circulating pipe to repeatedly circulate that cleaning solution, and a filter for filtering the used cleaning solution circulated by the circulating pump to return the cleaning solution to the internal cleaning tank through the intake. The device prevents contaminating materials from adhering to the semiconductor wafers by spirally drawing out the used cleaning solution from the internal tank.

Abstract: A wafer supporting and/or conveying apparatus includes at least one supporter having a plurality of recesses into which the edge of a wafer is inserted, for supporting the wafer inserted into the recesses at the lower portion of the wafer; a first connection rod for connecting the supporter to an actuator; at least two holding rods having a plurality of recesses into which the edge of a wafer is inserted, for holding the wafer at the top of its both sides; and a second connection rod for connecting the holding rods to the actuator. A connecting board is set between the first connection rod and supporter, or between the second connection rod and supporter, thereby increasing stability in the apparatus.

Abstract: A semiconductor wafer cleaning apparatus includes an internal cleaning tank having an inlet for introducing and an outlet for removing a cleaning solution, and an external cleaning tank surrounding the internal cleaning tank and having a plurality of inlets and outlets for introducing and removing the cleaning solution. First and second circulation pumps each disposed in the middle of the first and second circulation pipes for connecting the inlet and outlet of the internal cleaning tank with the plurality of inlets and outlets of the external cleaning tank are also provided. A baffle plate may also be disposed within the internal cleaning tank for fixing and separating a cassette having a plurality of wafers contained therein from the bottom of internal cleaning tank.

Abstract: A wet treatment device for bathing a semiconductor wafer in a processing solution is disclosed. The device includes a processing tank, a discharge ditch around the processing tank, a flow control board located in the processing tank, a supply line supplying processing solution to the processing tank, and a discharge line carrying away processing solution from the discharge ditch. Any two walls in the device are connected in a curved surface having an arc sufficient to reduce accumulation of contaminant matter at the curved surface. A line connects to a wall in a curved annular surface any two walls having an arc sufficient to reduce abrasion at the curved annular surface. The curved surface can be substituted with an approximation of a curved surface so long as the approximation has an arc sufficient to reduce accumulation/abrasion.

Abstract: A nozzle for spraying a cleaning solution, a body of the nozzle having its intake at one end, its sealed end portion at the other end, and a plurality of holes arranged linearly on its surface form inside of the body to outside of the body are disclosed. Also disclosed is a cleaning apparatus of a semiconductor device which includes a bath where wafers are cleaned and a cleaning solution spraying nozzle mounted at the bottom of the bath for spraying a cleaning solution through a plurality of holes formed on its surface, with the nozzle's one side being connected to a cleaning solution supply tube and the nozzle's other side being sealed. The hole's area through which the solution passes gradually decreases from one side of the nozzle through which the cleaning solution is induced, to the other side sealed so that the solution is sprayed with a uniform pressure.

Abstract: A wafer wet processing device which comprises a processing container containing side walls; means for introducing a processing solution to the lower portion of said container; means for removing the processing solution from the upper portion of said container; and a wafer carrier containing side walls and being open at the top and bottom thereof, said wafer carrier being slidably disposed within said processing chamber, wherein at least the lower portion of the side walls of said processing container is contiguous with the lower portion of the side walls of said wafer carrier so that the entirety of the processing solution is introduced within the wafer carrier.

Abstract: A semiconductor wafer cleaning apparatus includes an internal cleaning tank having an inlet for introducing and an outlet for removing a cleaning solution, and an external cleaning tank surrounding the internal cleaning tank and having a plurality of inlets and outlets for introducing and removing the cleaning solution. First and second circulation pumps each disposed in the middle of the first and second circulation pipes for connecting the inlet and outlet of the internal cleaning tank with the plurality of inlets and outlets of the external cleaning tank are also provided. A baffle plate may also be disposed within the internal cleaning tank for fixing and separating a cassette having a plurality of wafers contained therein from the bottom of internal cleaning tank.

Abstract: A wafer wet treatment apparatus includes a first supply/discharge line, an outer bath connected to the first supply/discharge line, an inner bath within the outer bath, a second supply/discharge line connected to the inner bath, and at least one partition located on a portion of the inner bath.

Abstract: An improved apparatus for cleansing a semiconductor wafer which is capable of effectively removing the foreign substances from the wafer mounting grooves formed in the boats and the outer surface of the boat, for thus enhancing the reliability of the products. The apparatus includes an outer tub having a first cleansing liquid supply tube for supplying a cleansing liquid therethrough and a discharge tube for discharging the cleansing liquid therethrough, an inner tub disposed within the outer tub, a baffle plate disposed within the inner tub for distributing the cleansing liquid supplied to a wafer, a boat disposed on the baffle plate, on which boat a wafer is mounted, a foreign substance extraction tube disposed in a wafer support position of the boat for introducing the foreign substances formed in the interior of the inner tub thereinto and for discharging the same to the outside, and a second cleansing liquid supply tube for supplying the cleansing liquid to the foreign substance extraction tube.

Abstract: An improved apparatus for cleansing a semiconductor wafer which is capable of separating an inner tub into an upper and lower portion, for thus adjustably forming the inner tub, so that it is possible to fold the upper portion of the inner tub when cleansing the wafer, for thus reducing the cleansing space, whereby it is possible to reduce the amount of the cleansing liquid and increasing the cleansing effect.

Abstract: An improved apparatus for cleansing a semiconductor wafer which is capable of reducing the cleansing space by providing an inner tub made of a shape memory alloy and deforming the shape of the inner tub into the shape of the wafer, for thus reducing the cleansing space. The apparatus includes an outer tub having a supply tube for supplying a cleansing liquid and a discharge tube for discharging the cleansing liquid, an inner tub including an upper portion made of a shape memory alloy and disposed within the outer tub, a temperature control member for controlling the temperature of the cleansing liquid, a baffle plate for controlling the flowing amount of the cleansing liquid supplied to a wafer through the supply tube, a pump disposed in the supply tube for supplying the cleansing liquid into the inner tub, and a filter for filtering the cleansing liquid.

Abstract: A method for fabricating a highly reliable phase shift mask, comprising the steps of: forming a phase shifting film and a screen on a transparent substrate, in sequence; forming an impurity layer on the screen; diffusing the impurities of the impurity layer selectively into the screen; removing the regions of the screen which are free of impurities; and selectively removing the phase shifting film. By virtue of using inorganic resist for screen, the method can be executed at low temperatures and a distortion of mask substrate can be prevented. Next, the vertical side wall of the shifter can be accomplished with ease owing to the high etch selectivity of the screen. In addition, the shifter beneath the screen offsets the bad affect resulting from the topology of the shifter, improving the effect of phase shift.