Patents by Inventor SUK-EUN KANG
SUK-EUN KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923011Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.Type: GrantFiled: June 10, 2022Date of Patent: March 5, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-Ho Seo, Suk-Eun Kang, Do Gyeong Lee, Ju Won Lee
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Patent number: 11682460Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.Type: GrantFiled: April 6, 2022Date of Patent: June 20, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-ho Seo, Sangwon Hwang, Suk-Eun Kang, Haneol Jang, Youngwook Jeong, Wanha Hwang
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Publication number: 20230139427Abstract: An operation method of a nonvolatile memory device includes performing a 1-stage program step and a 1-stage verify step on a first word line, storing a first time stamp, performing the 1-stage program step and the 1-stage verify step on a second word line, storing a second time stamp, calculating a delay time based on the first time stamp and the second time stamp, determining whether the delay time is greater than a threshold value, adjusting at least one 2-stage verify voltage associated with the first word line from a first voltage level to a second voltage level based on the delay time, and performing a 2-stage program step and a 2-stage verify step on the first word line. A level of the at least one 1-stage verify voltage is lower than the second voltage level, and the second voltage level is lower than the first voltage level.Type: ApplicationFiled: July 31, 2022Publication date: May 4, 2023Inventors: JUN-HO SEO, JUWON LEE, SUK-EUN KANG, DOGYEONG LEE, YOUNGWOOK JEONG, SANG-HYUN JOO
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Publication number: 20220301629Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.Type: ApplicationFiled: June 10, 2022Publication date: September 22, 2022Inventors: JUN-HO SEO, SUK-EUN KANG, DO GYEONG LEE, JU WON LEE
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Publication number: 20220230687Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.Type: ApplicationFiled: April 6, 2022Publication date: July 21, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Jun-ho SEO, Sangwon HWANG, Suk-Eun KANG, Haneol JANG, Youngwook JEONG, Wanha HWANG
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Patent number: 11380398Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.Type: GrantFiled: February 23, 2021Date of Patent: July 5, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-Ho Seo, Suk-Eun Kang, Do Gyeong Lee, Ju Won Lee
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Patent number: 11322208Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.Type: GrantFiled: November 16, 2020Date of Patent: May 3, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-ho Seo, Sangwon Hwang, Suk-Eun Kang, Haneol Jang, Youngwook Jeong, Wanha Hwang
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Publication number: 20220020433Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.Type: ApplicationFiled: February 23, 2021Publication date: January 20, 2022Inventors: JUN-HO SEO, SUK-EUN KANG, DO GYEONG LEE, JU WON LEE
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Publication number: 20210225451Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.Type: ApplicationFiled: November 16, 2020Publication date: July 22, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Jun-ho SEO, Sangwon HWANG, Suk-Eun KANG, Haneol JANG, Youngwook JEONG, Wanha HWANG
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Patent number: 11004517Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.Type: GrantFiled: March 18, 2019Date of Patent: May 11, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yunjung Lee, Chanha Kim, Suk-eun Kang, Seungkyung Ro, Kwangwoo Lee, Juwon Lee, Jinwook Lee, Heewon Lee
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Patent number: 10573389Abstract: An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.Type: GrantFiled: June 21, 2018Date of Patent: February 25, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Chan-Ha Kim, Suk-Eun Kang, Ji-Su Kim, Seung-Kyung Ro, Dong-Gi Lee, Yun-Jung Lee, Jin-Wook Lee, Hee-Won Lee, Joon-Suc Jang, Young-Ha Choi
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Publication number: 20200058359Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.Type: ApplicationFiled: March 18, 2019Publication date: February 20, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Yunjung Lee, Chanha Kim, Suk-eun Kang, Seungkyung Ro, Kwangwoo Lee, Juwon Lee, Jinwook Lee, Heewon Lee
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Publication number: 20190115078Abstract: An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.Type: ApplicationFiled: June 21, 2018Publication date: April 18, 2019Inventors: CHAN-HA KIM, SUK-EUN KANG, JI-SU KIM, SEUNG-KYUNG RO, DONG-GI LEE, YUN-JUNG LEE, JIN-WOOK LEE, HEE-WON LEE, JOON-SUC JANG, YOUNG-HA CHOI