Abstract: A semiconductor memory device includes a cell array region formed on a substrate, a word line contact region, and a page buffer region coupled to the cell array region through bit lines, wherein at least one of the bit lines has a curved structure toward the word line contact region. According to an embodiment, a misalignment between a cell plug and a contact plug caused by a natural cell plug bending phenomenon may be reduced to improve operational reliability of a semiconductor memory device.

Abstract: A semiconductor memory device includes a cell array region formed on a substrate, a word line contact region, and a page buffer region coupled to the cell array region through bit lines, wherein at least one of the bit lines has a curved structure toward the word line contact region. According to an embodiment, a misalignment between a cell plug and a contact plug caused by a natural cell plug bending phenomenon may be reduced to improve operational reliability of a semiconductor memory device.

Abstract: A semiconductor memory device includes a cell array region formed on a substrate, a word line contact region, and a page buffer region coupled to the cell array region through bit lines, wherein at least one of the bit lines has a curved structure toward the word line contact region. According to an embodiment, a misalignment between a cell plug and a contact plug caused by a natural cell plug bending phenomenon may be reduced to improve operational reliability of a semiconductor memory device.

Abstract: A semiconductor memory device includes a cell array region formed on a substrate, a word line contact region, and a page buffer region coupled to the cell array region through bit lines, wherein at least one of the bit lines has a curved structure toward the word line contact region. According to an embodiment, a misalignment between a cell plug and a contact plug caused by a natural cell plug bending phenomenon may be reduced to improve operational reliability of a semiconductor memory device.

Abstract: A method of controlling a color-tone density (CTD) of an image forming apparatus including a plurality of developers configured to circularly perform a developing operation. The method includes developing test patches on an OPC sequentially from a developer to be developable preferentially, measuring CTDs of the developed test patches, and controlling a development variable using the measure CTDs.

Abstract: A color image forming apparatus and a control method thereof, in which a transfer start position of a transfer belt is determined based on electric signals that correspond to a width of a position indicator provided on a transfer belt and are detectable during one rotation of the transfer belt even when noise occurs in output, thereby reducing the overall printing time.

Abstract: A three-dimensional 3D nonvolatile memory device includes vertical channel layers protruding from a substrate; interlayer insulating layers and conductive layer patterns alternately deposited along the vertical channel layers; a barrier metal pattern surrounding each of the conductive layer patterns; a charge blocking layer interposed between the vertical channel layers and the barrier metal patterns; and a diffusion barrier layer interposed between the barrier metal patterns and the charge blocking layer.

Abstract: A three-dimensional 3D nonvolatile memory device includes vertical channel layers protruding from a substrate; interlayer insulating layers and conductive layer patterns alternately deposited along the vertical channel layers; a barrier metal pattern surrounding each of the conductive layer patterns; a charge blocking layer interposed between the vertical channel layers and the barrier metal patterns; and a diffusion barrier layer interposed between the barrier metal patterns and the charge blocking layer.

Abstract: A three-dimensional 3D nonvolatile memory device includes vertical channel layers protruding from a substrate; interlayer insulating layers and conductive layer patterns alternately deposited along the vertical channel layers; a barrier metal pattern surrounding each of the conductive layer patterns; a charge blocking layer interposed between the vertical channel layers and the barrier metal patterns; and a diffusion barrier layer interposed between the barrier metal patterns and the charge blocking layer.

Abstract: A semiconductor device includes a bit line and a common source line formed on a cell array region of a substrate, a first channel layer coupled to the common source line and extending higher than the common source line, a second channel layer coupled to the bit line and extending higher than the bit line, and a coupling pattern coupling a top of the first channel layer opposite to the common source line and a top of the second channel layer opposite to the bit line.

Abstract: A semiconductor device includes a bit line and a common source line formed on a cell array region of a substrate, a first channel layer coupled to the common source line and extending higher than the common source line, a second channel layer coupled to the bit line and extending higher than the bit line, and a coupling pattern coupling a top of the first channel layer opposite to the common source line and a top of the second channel layer opposite to the bit line.

Abstract: An image forming apparatus and a control method thereof which performs an auto-recovery function, the image forming apparatus including: a housing including a door; an image forming unit mounted in the housing to form an image on a print medium; a medium discharger which discharges the print medium to an outside of the housing; a finisher mounted on the housing to perform a finishing operation; a discharging direction changer which changes a discharging direction of the print medium to guide the print medium to one of the medium discharger and the finisher; and a controller which controls the image forming unit, the finisher and the discharging direction changer, and selectively performs an auto-recovery operation to automatically recover a jam of the print medium depending upon an occurrence location of the jam of the print medium if the jam occurs from a predetermined location of a print medium feeding path.

Abstract: A method of controlling a color-tone density (CTD) of an image forming apparatus including a plurality of developers configured to circularly perform a developing operation. The method includes developing test patches on an OPC sequentially from a developer to be developable preferentially, measuring CTDs of the developed test patches, and controlling a development variable using the measure CTDs.

Abstract: A three-dimensional 3D nonvolatile memory device includes vertical channel layers protruding from a substrate; interlayer insulating layers and conductive layer patterns alternately deposited along the vertical channel layers; a barrier metal pattern surrounding each of the conductive layer patterns; a charge blocking layer interposed between the vertical channel layers and the barrier metal patterns; and a diffusion barrier layer interposed between the barrier metal patterns and the charge blocking layer.

Abstract: A color image forming apparatus and a control method thereof, in which a transfer start position of a transfer belt is determined based on electric signals that correspond to a width of a position indicator provided on a transfer belt and are detectable during one rotation of the transfer belt even when noise occurs in output, thereby reducing the overall printing time.

Abstract: An image forming apparatus and a control method thereof which performs an auto-recovery function, the image forming apparatus including: a housing including a door; an image forming unit mounted in the housing to form an image on a print medium; a medium discharger which discharges the print medium to an outside of the housing; a finisher mounted on the housing to perform a finishing operation; a discharging direction changer which changes a discharging direction of the print medium to guide the print medium to one of the medium discharger and the finisher; and a controller which controls the image forming unit, the finisher and the discharging direction changer, and selectively performs an auto-recovery operation to automatically recover a jam of the print medium depending upon an occurrence location of the jam of the print medium if the jam occurs from a predetermined location of a print medium feeding path.

Abstract: A nonvolatile memory device includes a plurality of strings each having vertically-stacked active layers over a plurality of word lines, at least one bit line connection unit vertically formed over one end of the word lines and having a stairway shape, and a plurality of bit lines each coupled to each of a plurality of active regions of the bit line connection unit.

Abstract: A semiconductor device includes a graded SiGe layer and a strained Si layer that are formed on a Si surface. A gate is formed on the strained Si layer. The gate includes a tunnel oxide layer, a floating gate, a dielectric layer and a control gate is formed.