Abstract: Disclosed are an apparatus for measuring an in-situ crosslink density includes a support configured to fix or support a cross-linkable structure, a light source configured to irradiate light for crosslinking to the cross-linkable structure, and a probe configured to provide in-situ micro-deformation to the cross-linkable structure, wherein the in-situ crosslink density of the cross-linkable structure is measured from a stress-strain phase lag of the cross-linkable structure by the in-situ micro-deformation, a method of measuring the in-situ crosslink density, a method of manufacturing a crosslinked product, a crosslinked product obtained by the method, and a polymer substrate and an electronic device including the crosslinked product.

Abstract: An organic thin film transistor includes a gate electrode, an organic semiconductor layer overlapped with the gate electrode, a hydrophilic nanolayer on the organic semiconductor layer, and a source electrode and a drain electrode electrically connected to the organic semiconductor layer.

Abstract: A biosensor includes a stretchable substrate, a pixel defining layer on the stretchable substrate and including a first pixel defining layer at least partially defining a first opening and a second pixel defining layer at least partially defining a second opening, a photo-detecting element at least partially in the first opening, and a first light emitting element at least partially in the second opening, wherein an area of the first pixel defining layer is equal to or greater than about twice an area of the first opening.

Abstract: Disclosed are a sensor array and a device including the sensor. In the sensor array in which a plurality of unit element groups are arranged, each of the unit element groups includes a pressure sensor, a light emitting element, and/or a light detecting element, and the pressure sensor includes a variable resistance layer including a stretchable polymer and conductive nanostructures dispersed in the stretchable polymer.

Abstract: Disclosed are an apparatus for measuring an in-situ crosslink density includes a support configured to fix or support a cross-linkable structure, a light source configured to irradiate light for crosslinking to the cross-linkable structure, and a probe configured to provide in-situ micro-deformation to the cross-linkable structure, wherein the in-situ crosslink density of the cross-linkable structure is measured from a stress-strain phase lag of the cross-linkable structure by the in-situ micro-deformation, a method of measuring the in-situ crosslink density, a method of manufacturing a crosslinked product, a crosslinked product obtained by the method, and a polymer substrate and an electronic device including the crosslinked product.

Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.

Abstract: An organic compound is represented by Chemical Formula 1, and an organic thin film, a thin film transistor, and an electronic device includes the organic compound.

Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.

Abstract: An organic semiconductor compound represented by Chemical Formula 1 is highly fused due to fusion of greater than or equal to 4 rings, and has smooth intermolecular charge transfer due to relatively high planarity.

Abstract: An organic compound is represented by Chemical Formula 1, and an organic thin film, a thin film transistor, and an electronic device includes the organic compound.

Abstract: A resin dispenser for nano-imprinting includes a housing including a lower chamber in which a resin is filled, a slit defined in a lower part of the lower chamber and through which the resin is discharged, and an upper chamber in which a pressure-applying fluid is filled, and a membrane separating the lower and upper chambers from each other, and of which an edge is fixed on a middle part of the housing, where the fluid is configured to apply the pressure to the membrane and protrude the membrane toward the slit of the lower chamber.

Abstract: An organic semiconductor compound represented by Chemical Formula 1 is highly fused due to fusion of greater than or equal to 4 rings, and has smooth intermolecular charge transfer due to relatively high planarity.

Abstract: A wire grid polarizer includes: a substrate; a wire grid layer disposed on the substrate and including a plurality of wire patterns arranged at regular intervals; and a passivation layer disposed on the substrate to cover the wire grid layer and including a material having a refractive index less than 1.4.

Abstract: A resin dispenser for nano-imprinting includes a housing including a lower chamber in which a resin is filled, a slit defined in a lower part of the lower chamber and through which the resin is discharged, and an upper chamber in which a pressure-applying fluid is filled, and a membrane separating the lower and upper chambers from each other, and of which an edge is fixed on a middle part of the housing, where the fluid is configured to apply the pressure to the membrane and protrude the membrane toward the slit of the lower chamber.

Abstract: A wire grid polarizer includes: a substrate; a wire grid layer disposed on the substrate and including a plurality of wire patterns arranged at regular intervals; and a passivation layer disposed on the substrate to cover the wire grid layer and including a material having a refractive index less than 1.4.