Patents by Inventor Suk-ho Yoon
Suk-ho Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140231863Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.Type: ApplicationFiled: February 19, 2014Publication date: August 21, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kee Won LEE, Jong Uk SEO, Suk Ho YOON, Keon Hun LEE, Sang Don LEE
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Patent number: 8643037Abstract: There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.Type: GrantFiled: April 6, 2012Date of Patent: February 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun Wook Shim, Suk Ho Yoon, Tan Sakong, Je Won Kim, Ki Sung Kim
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Publication number: 20130316481Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.Type: ApplicationFiled: March 18, 2013Publication date: November 28, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Ho PARK, Ki Sung KIM, Chul Min KIM, Suk Ho YOON, Tae Hyun LEE
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Patent number: 8558263Abstract: Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.Type: GrantFiled: June 14, 2011Date of Patent: October 15, 2013Assignee: Samsung Electronics Co., LtdInventors: Suk-ho Yoon, Cheol-soo Sone
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Publication number: 20130255578Abstract: A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate.Type: ApplicationFiled: March 13, 2013Publication date: October 3, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tan SAKONG, Do Young RHEE, Ki Sung KIM, Suk Ho YOON, Young Sun KIM, Sung Tae KIM
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Publication number: 20130244353Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.Type: ApplicationFiled: March 15, 2013Publication date: September 19, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Do Young RHEE, Tan SAKONG, Ki Sung KIM, Suk Ho YOON, Young Sun KIM, Sung Tae KIM
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Patent number: 8378381Abstract: There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0<x<1, 0<y<1, and 0<x+y<1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InxGa1-xN, where 0<x<0.2, and GaN; a well layer including InxGa1-xN, where 0<x<1; a third barrier layer including one of InxGa1-xN, where 0<x<0.2 and GaN; and a lattice mismatch relaxation layer including one of AlxInyGa1-x-yN, where 0<x<1, 0<y<1, and 0<x+y<1, AlxGa1-xN, where 0<x<1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.Type: GrantFiled: September 24, 2010Date of Patent: February 19, 2013Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tan Sakong, Cheol Soo Sone, Ho Sun Paek, Suk Ho Yoon, Jeong Wook Lee
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Publication number: 20130020555Abstract: A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01?x?0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.Type: ApplicationFiled: July 23, 2012Publication date: January 24, 2013Inventors: Jong Sun Maeng, Bum Joon Kim, Ki Sung Kim, Suk Ho Yoon, Sung Tae Kim
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Publication number: 20120322188Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.Type: ApplicationFiled: June 14, 2012Publication date: December 20, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Sun MAENG, Ki Ho PARK, Bum Joon KIM, Hyun Seok RYU, Jung Hyun LEE, Boung Kyun KIM, Ki Sung KIM, Suk Ho YOON
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Publication number: 20120261687Abstract: There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.Type: ApplicationFiled: April 6, 2012Publication date: October 18, 2012Inventors: Hyun Wook SHIM, Suk Ho YOON, Tan SAKONG, Je Won KIM, Ki Sung KIM
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Publication number: 20120171815Abstract: Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.Type: ApplicationFiled: October 19, 2011Publication date: July 5, 2012Inventors: Jong Sun MAENG, Ki Sung Kim, Bum Joon Kim, Suk Ho Yoon, Hyun Seok Ryu, Sung Tae Kim
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Patent number: 8183068Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.Type: GrantFiled: March 10, 2010Date of Patent: May 22, 2012Assignees: Samsung Electro-Mechanics Co., Ltd., Seoul National University Industry FoundationInventors: Jeong-wook Lee, Heon-su Jeon, Suk-ho Yoon, Joo-sung Kim
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Publication number: 20120097184Abstract: A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl2 gases under high temperature and low pressure conditions. According to the method, damage of a surface of the wafer is minimized. In addition, since reduction in thickness and an outer diameter of the wafer is minimized, a number of attempts at reprocessing the wafer may be increased.Type: ApplicationFiled: October 17, 2011Publication date: April 26, 2012Inventors: Ki Ho PARK, Kong Tan Sa, Suk Ho Yoon, Hyun Seok Ryu, Bo A Shin
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Publication number: 20110248306Abstract: Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.Type: ApplicationFiled: June 14, 2011Publication date: October 13, 2011Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Suk-ho YOON, Cheol-soo Sone
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Patent number: 7989244Abstract: Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.Type: GrantFiled: May 23, 2007Date of Patent: August 2, 2011Assignee: Samsung LED Co., Ltd.Inventors: Kyoung-kook Kim, Kwang-ki Choi, June-o Song, Suk-ho Yoon, Kwang-hyeon Baik, Hyun-soo Kim
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Patent number: 7981775Abstract: Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.Type: GrantFiled: December 28, 2005Date of Patent: July 19, 2011Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Suk-ho Yoon, Cheol-soo Sone
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Patent number: 7935554Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.Type: GrantFiled: March 19, 2009Date of Patent: May 3, 2011Assignee: Samsung LED Co., Ltd.Inventors: Jeong-wook Lee, Youn-joon Sung, Ho-sun Paek, Hyun-soo Kim, Joo-sung Kim, Suk-ho Yoon
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Patent number: 7888694Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.Type: GrantFiled: September 22, 2006Date of Patent: February 15, 2011Assignees: Samsung Electro-Mechanics Co., Ltd., Seoul National University Industry FoundationInventors: Jeong-wook Lee, Heon-su Jeon, Suk-ho Yoon, Joo-sung Kim
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Publication number: 20110012145Abstract: There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0<x<1, 0<y<1, and 0<x+y<1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InxGa1-xN, where 0<x<0.2, and GaN; a well layer including InxGa1-xN, where 0<x<1; a third barrier layer including one of InxGa1-xN, where 0<x<0.2 and GaN; and a lattice mismatch relaxation layer including one of AlxInyGa1-x-yN, where 0<x<1, 0<y<1, and 0<x+y<1, AlxGa1-xN, where 0<x<1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.Type: ApplicationFiled: September 24, 2010Publication date: January 20, 2011Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tan SAKONG, Cheol Soo Sone, Ho Sun Paek, Suk Ho Yoon, Jeong Wook Lee
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Patent number: 7871845Abstract: Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.Type: GrantFiled: June 8, 2007Date of Patent: January 18, 2011Assignee: Samsung LED Co., Ltd.Inventors: Suk-ho Yoon, Sung-ho Jin, Kyoung-kook Kim, Jeong-wook Lee