Abstract: A solid electrolyte membrane for a solid-state battery and a battery comprising the same is provided. The battery may comprise lithium metal as a negative electrode active material. The solid electrolyte membrane comprises an inhibiting layer, which is preferably capable of inhibiting growth of lithium dendrite, because it includes an effective amount of a dendrite growth-inhibiting material, which is capable of ionizing lithium deposited in the form of metal. Thus, when lithium metal is used as a negative electrode for a solid-state battery comprising the solid electrolyte membrane, it is possible to delay and/or inhibit growth of lithium dendrite, and thus to effectively prevent an electrical short-circuit caused by dendrite growth.

Abstract: A hydrogen storage system is disclosed and includes a storage unit including a plurality of unit storage containers, in which metal hydride materials are respectively provided in an interior thereof and which are connected to each other in parallel, and a thermal fluid line defining a thermal fluid passage, which passes via the plurality of unit storage containers continuously and through which a thermal fluid flows for heating or cooling the unit storage containers, thereby enhancing a storage performance and an efficiency of the hydrogen.

Abstract: A hydrogen storage device includes a storage container having an accommodation space in an interior thereof, a first metal hydride material provided in the interior of the storage container and that stores hydrogen, and a second metal hydride material provided in the interior of the storage container and that stores the hydrogen at a pressure that is different from that of the first metal hydride material. An advantageous effect of restraining an excessive rise of a pressure of the storage container and enhancing safety and reliability may be obtained.

Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.

Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.

Abstract: Semiconductor device as provided may include a substrate with an NMOS region and a PMOS region, and a first transistor in the NMOS region that includes a first gate stack and a first source/drain region on at least one side of the first gate stack. The semiconductor device may further include a second transistor in the PMOS region that includes a second gate stack and a second source/drain region on at least one side of the second gate stack. The first gate stack may include a first insulating film, a first gate electrode layer of first thickness, additional gate electrode layers, a and a first silicon layer, which may be sequentially laminated. The second gate stack may include a second insulating film, a fourth gate electrode layer of second thickness greater than the first thickness, additional gate electrode layers, and a second silicon layer, which may be sequentially laminated.

Abstract: A semiconductor device, including a substrate; an interlayer insulating layer having a trench on the substrate, the trench having a bottom and sidewalls; a dielectric layer on the bottom and sidewalls of the trench; a work function control layer on the dielectric layer; a wetting layer on the work function control layer; a gap fill layer on the wetting layer; and a reactive layer between the wetting layer and the gap fill layer, the reactive layer being thicker than the gap fill layer.

Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Abstract: A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.

Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Abstract: A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.

Abstract: Provided are a method of directly detecting and reproducing a main title stored in a disc in a read mode, a disc player using the same, and a computer readable medium of instructions for performing the same. The method includes determining whether a direct reproduction mode is enabled, detecting title information stored in a predetermined area of a disc when the direct reproduction mode is enabled, detecting a main title having the longest reproduction time from the detected title information detected, and reproducing the detected main title.