Patents by Inventor Suk-hoon Kim

Suk-hoon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250071970
    Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.
    Type: Application
    Filed: November 11, 2024
    Publication date: February 27, 2025
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jang Eun LEE, Suk Hoon KIM, Hyo-Sub KIM
  • Patent number: 12167587
    Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: December 10, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang Eun Lee, Suk Hoon Kim, Hyo-Sub Kim
  • Publication number: 20230035899
    Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.
    Type: Application
    Filed: April 29, 2022
    Publication date: February 2, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jang Eun LEE, Suk Hoon KIM, Hyo-Sub KIM
  • Publication number: 20190096770
    Abstract: Semiconductor device as provided may include a substrate with an NMOS region and a PMOS region, and a first transistor in the NMOS region that includes a first gate stack and a first source/drain region on at least one side of the first gate stack. The semiconductor device may further include a second transistor in the PMOS region that includes a second gate stack and a second source/drain region on at least one side of the second gate stack. The first gate stack may include a first insulating film, a first gate electrode layer of first thickness, additional gate electrode layers, a and a first silicon layer, which may be sequentially laminated. The second gate stack may include a second insulating film, a fourth gate electrode layer of second thickness greater than the first thickness, additional gate electrode layers, and a second silicon layer, which may be sequentially laminated.
    Type: Application
    Filed: April 18, 2018
    Publication date: March 28, 2019
    Inventors: HYUNG-SEOK HONG, SUK HOON KIM, IN HEE LEE, HYE-LAN LEE
  • Publication number: 20160093617
    Abstract: A semiconductor device, including a substrate; an interlayer insulating layer having a trench on the substrate, the trench having a bottom and sidewalls; a dielectric layer on the bottom and sidewalls of the trench; a work function control layer on the dielectric layer; a wetting layer on the work function control layer; a gap fill layer on the wetting layer; and a reactive layer between the wetting layer and the gap fill layer, the reactive layer being thicker than the gap fill layer.
    Type: Application
    Filed: March 2, 2015
    Publication date: March 31, 2016
    Inventors: Jung-Min PARK, Suk-Hoon KIM, Min-Woo SONG, Seok-Jun WON, In-Hee LEE, Kyung-Il HONG, Sang-Jin HYUN
  • Patent number: 9099336
    Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: August 4, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-Won Ha, Suk-Hoon Kim, Ju-Youn Kim, Kwang-You Seo, Jong-Mil Youn
  • Patent number: 9035398
    Abstract: A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: May 19, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seok-Jun Won, Suk-Hoon Kim, Hyung-Suk Jung
  • Publication number: 20140239405
    Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 28, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-Won Ha, Suk-Hoon Kim, Ju-Youn Kim, Kwang-You Seo, Jong-Mil Youn
  • Publication number: 20140077281
    Abstract: A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.
    Type: Application
    Filed: August 27, 2013
    Publication date: March 20, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seok-Jun WON, Suk-Hoon KIM, Hyung-Suk JUNG
  • Publication number: 20050063278
    Abstract: Provided are a method of directly detecting and reproducing a main title stored in a disc in a read mode, a disc player using the same, and a computer readable medium of instructions for performing the same. The method includes determining whether a direct reproduction mode is enabled, detecting title information stored in a predetermined area of a disc when the direct reproduction mode is enabled, detecting a main title having the longest reproduction time from the detected title information detected, and reproducing the detected main title.
    Type: Application
    Filed: August 6, 2004
    Publication date: March 24, 2005
    Inventor: Suk-hoon Kim