Abstract: The present invention relates to an ethylene disposal apparatus comprising: a plasma discharge part having an inlet and an outlet and being filled with an adsorbent; and an electrode part for generating plasma inside the plasma discharge part, wherein the adsorbent has a catalyst supported thereon. The present invention relates to an ethylene disposal method using the ethylene disposal apparatus, the method comprising the steps of: (a) injecting ethylene-containing gas into a plasma discharge part filled with the adsorbent; (b) applying voltage to the electrode part and generating plasma in the plasma discharge part, thereby degrading the injected ethylene; and (c) cooling the plasma discharge part.

Abstract: The present invention relates to an ethylene disposal apparatus comprising: a plasma discharge part having an inlet and an outlet and being filled with an adsorbent; and an electrode part for generating plasma inside the plasma discharge part, wherein the adsorbent has a catalyst supported thereon. The present invention relates to an ethylene disposal method using the ethylene disposal apparatus, the method comprising the steps of: (a) injecting ethylene-containing gas into a plasma discharge part filled with the adsorbent; (b) applying voltage to the electrode part and generating plasma in the plasma discharge part, thereby degrading the injected ethylene; and (c) cooling the plasma discharge part.

Abstract: The present invention provides a neutron generating device for generating a high neutron flux by forming plasma in the vicinity of a target and by accelerating electrons and charged particles in the plasma toward the target. Magnetic field is formed in the vicinity of the target and a microwave generator irradiates microwaves into the space where the magnetic field is generated to thereby generate plasma in the space. The accelerated electrons and charged particles collide with the target to generate neutron flux. Also, to prevent the target surface from being excessively heated, the plasma is generated in a pulsed mode and target voltage is applied in a pulsed mode. To secure a continuous process, the level of target bias voltage for the target is adjusted so that the target re-adsorbs elements when the elements adsorbed on the target are depleted.

Abstract: The present invention is a plasma generation source and a thing that is in its application and it is for getting high quality thin film by generating even high density plasma in high vacuum and like this plasma generation source applying like this plasma generation source to sputtering system, neutral particle beam source, thin film deposition system combining sputtering system and neutral particle beam source. According to the present invention, it generates plasma by using microwave through the microwave irradiating equipment and magnetic field by more than one pair of the belt type magnets and above goal can be accomplished maximizing plasma confinement effect by inducing electron returning trajectory in accordance with above continuous structure on belt type magnet.

Abstract: The present invention relates to an apparatus and method for manufacturing a semiconductor light-emitting device using a neutral particle beam. According to the present invention, since the kinetic energy of the neutral particle beam is provided as a portion of the reaction energy for causing a nitride semiconductor single crystal thin film to be formed on a substrate, and the reaction energy is not provided as heat energy by heating a substrate as in the prior art, the substrate may be treated at a relatively low temperature. Furthermore, elements such as Si, Mg, and the like, which are solid elements required for doping are sprayed onto the substrate from a source which generates solid elements for doping together with the neutral particle beam to achieve high doping efficiency at a lower temperature.

Abstract: The present invention provides a neutron generating device for generating a high neutron flux by forming plasma in a high density in the vicinity of a target and by preventing the target surface from being excessively heated. Magnetic field is formed in the vicinity of the target to generate plasma inside a space, in which the magnetic field is formed so as to produce plasma in a high density in the vicinity of the target, thereby allowing a high neutron flux to be emitted from a target. Also, the present invention prevents the target surface from being excessively heated by producing plasma in pulsed mode and by applying target voltage in pulsed mode and secures a continuous process by adjusting a target bias voltage for targets that have depleted the adsorbed elements during the process to allow re-adsorption.

Abstract: The present invention is a plasma generation source and a thing that is in its application and it is for getting high quality thin film by generating even high density plasma in high vacuum and like this plasma generation source applying like this plasma generation source to sputtering system, neutral particle beam source, thin film deposition system combining sputtering system and neutral particle beam source. According to the present invention, it generates plasma by using microwave through the microwave irradiating equipment and magnetic field by more than one pair of the belt type magnets and above goal can be accomplished maximizing plasma confinement effect by inducing electron returning trajectory in accordance with above continuous structure on belt type magnet.

Abstract: The present invention relates to an apparatus and method for manufacturing a semiconductor light-emitting device using a neutral particle beam. According to the present invention, since the kinetic energy of the neutral particle beam is provided as a portion of the reaction energy for causing a nitride semiconductor single crystal thin film to be formed on a substrate, and the reaction energy is not provided as heat energy by heating a substrate as in the prior art, the substrate may be treated at a relatively low temperature. Furthermore, elements such as Si, Mg, and the like, which are solid elements required for doping are sprayed onto the substrate from a source which generates solid elements for doping together with the neutral particle beam to achieve high doping efficiency at a lower temperature.

Abstract: The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma discharging space inside which processing gases are converted to plasma ions through a plasma discharge, a heavy metal plate which converts the plasma ions into neutral particles through collisions, a plasma limiter which prevents plasma ions and electrons from passing through and allows the neutral particles produced by collisions of the plasma ions with the heavy metal plate to pass through, and a treating housing inside which a substrate to be treated is located, wherein the plasma discharging space is sandwiched between the heavy metal plate and the plasma limiter.

Abstract: The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma discharging space inside which processing gases are converted to plasma ions through a plasma discharge, a heavy metal plate which converts the plasma ions into neutral particles through collisions, a plasma limiter which prevents plasma ions and electrons from passing through and allows the neutral particles produced by collisions of the plasma ions with the heavy metal plate to pass through, and a treating housing inside which a substrate to be treated is located, wherein the plasma discharging space is sandwiched between the heavy metal plate and the plasma limiter.

Abstract: The present invention relates to an apparatus for treating the surface with neutral particle beams comprising an antenna container, a plasma generating part, a neutral particle beam generating part and a treating part, wherein the antenna container comprises antennas connected to high frequency electric power supply through which high frequency electric power supplies, the plasma generating part transfers gases from a gas injector into plasmas with the supplied power, the neutral particle beam generating part reverts the obtained plasmas to neutral particle beams via the collision thereof with metal plates, and the treating part treats the surface of a target with the neutral particle beams.

Abstract: The present invention relates to an apparatus for treating the surface with neutral particle beams comprising an antenna container, a plasma generating part, a neutral particle beam generating part and a treating part, wherein the antenna container comprises antennas connected to high frequency electric power supply through which high frequency electric power supplies, the plasma generating part transfers gases from a gas injector into plasmas with the supplied power, the neutral particle beam generating part reverts the obtained plasmas to neutral particle beams via the collision thereof with metal plates, and the treating part treats the surface of a target with the neutral particle beams.