Abstract: An apparatus and a method for preventing collision with a vehicle are provided. The apparatus and method are capable of preventing collision with a front vehicle and a rear-side vehicle by braking a traveling vehicle in a braking avoidance section when there is a possibility of a collision. In addition, a vehicle steering right is imposed to a driver in a steering avoidance section when there is no the possibility of a collision, based on collision with a rear-side vehicle according to steering in a steering avoidance section, which is predicted in a braking avoidance section.

Abstract: An apparatus for growing a single crystal of a semiconductor compound of Group III-V or Group II-VI such as GaAs, InP, or CdTe by using a horizontal zone melt technique. A direct monitoring furnace comprising a double quartz tube made of a transparent material is disposed in the high temperature section of the grower, thereby enabling the observation of the entire crystal growth procedure with the naked eye or with a CCD (charge coupled device) camera tube, enabling high-speed variation of temperature gradient as well as high-speed heating, and thus enabling the single crystal growth of GaAs with low defects and high uniformity, and thus enabling the single crystal growth of GaAs with low defects and high uniformity in the axial direction of growth. The direct monitoring furnace includes a sub-heater as well as a main heating wire, so that a spike zone can be formed, thereby enabling the manufacture of GaAs wafers with low defects and high uniformity.

Abstract: A horizontal Bridgman single crystal growing apparatus using a direct monitoring electric furnace suitable for a single crystal growing of III-V, II-VI group compound semiconductor materials (InP, CdTe, etc.) including a gallium arsenide (GaAs). The apparatus is composed of: a heater wire being formed around a quartz tube for supporting, a cylindrical double quartz tube arranged with cooling water or gas inlet and outlet for circulation externally and coated with gold thin film on the internal wall surface thereof, thereby the high temperature heating over 1240.degree. C. is possible to obtain within a short period of time and also the cooling is possible, and whole process of the single crystal growing can be observed directly with naked eyes.