Abstract: The present invention relates to a ruthenium precursor compound, and more particularly, to a ruthenium precursor compound which is for providing ruthenium to an ammonia decomposition reaction catalyst and is represented by Formula CxHyOzNmRun, wherein x is an integer of 3 to 20, y is an integer of 0 to 32, z is an integer of 0 to 20, m is an integer of 0 to 10, and n is an integer of 1 to 3. In addition, the present invention relates to an ammonia reaction catalyst using the ruthenium precursor, and to a method for preparing the ammonia reaction catalyst, and provides an ammonia reaction catalyst having an excellent ammonia conversion rate at low temperatures, thereby being capable of efficient hydrogen production.

Abstract: Provided are a method of manufacturing a lithium silicate-based high-temperature dry sorbent for removing carbon dioxide and a high-temperature dry sorbent. The manufacturing method includes forming a mixed raw material by mixing a lithium precursor, silicon oxide and a metal oxide, obtaining a lithium silicate solid by drying the mixed raw material, and baking the obtained lithium silicate solid.

Abstract: Provided are a method of manufacturing a lithium silicate-based high-temperature dry sorbent for removing carbon dioxide and a high-temperature dry sorbent. The manufacturing method includes forming a mixed raw material by mixing a lithium precursor, silicon oxide and a metal oxide, obtaining a lithium silicate solid by drying the mixed raw material, and baking the obtained lithium silicate solid.

Abstract: A wafer transfer blade including a body including metal oxide and configured to support a wafer, and an adsorbing part on the body, the adsorbing part having at least one therein and configured to apply vacuum pressure to attach the wafer on the body may be provided. The body may include metal oxide to prevent static electricity.

Abstract: A gas injector for use in a semiconductor etching process including a plurality of injecting holes on the central portion thereof, for injecting process gases, a plurality of bolt holes formed on edges of the gas injector, facewise against a gas supply for securing the gas injector, a plurality of bolt head-accommodating slots formed on a first gas injecting face, for receiving the heads of the bolts, and a second gas injecting disposed plurality of bolt head accommodating slots on a face opposite to the first gas injecting face, whereby the gas injector can be successively installed each side down and thus, reused after the side first disposed towards the semiconductor workpieces has become too etched to provide the desired injection pattern.