Abstract: The subject invention provides systems and methodologies for projecting data from storage media directly attached to a projector. In one embodiment, a projector unit is provided that comprises an input port attached to the projector unit that receives input data from storage media connected to the input port; an embedded computer within the projector unit that utilizes an operating system and has applications stored thereon operable to render input data received from the storage media connected to the input port as a video signal; at least one of a local display screen attached to the projector and a projection lens within the projector for displaying a video signal rendered by the embedded computer; and a control input device attached to the projector unit that facilitates the communication of control input to the projector unit.

Abstract: A “wafer-less” etch chamber cleaning method varies the capacitance applied to radio frequency components of the chuck that is within the etch chamber (varies impedance of the chuck) so as to cause electric field lines within the etch chamber to terminate (bend) away from the chuck. Then the etch chamber can be cleaned using a very aggressive etch chemistry (e.g., NF3) that would otherwise damage the chuck; however, the electric field lines protect the chuck from the etch chemistry. The capacitance is varied according to a pre-established model. Further, the process evaluates the effectiveness of the pre-established model to produce feedback and constantly adjusts the pre-established model to increase the effectiveness of the cleaning process (according to the feedback).

Abstract: Systems and methods are provided that facilitate semiconductor processing, including etch processes. The invention provides real-time two-dimensional etch rate control. Prior to starting an etch process, a control model is selected that relates to the etch process. A formula or function description is developed from the model and solved to obtain process parameter values that are predicted to produce the desired etch rates. During the fabrication etch process, critical dimension measurements of a polysilicon gate are obtained. From these measurements, the etch process is modified so as to achieve a desired horizontal etch rate and a desired vertical etch rate. The etch process results in a polysilicon gate having a desired rectangular profile.

Abstract: A system and/or methodology that facilitates verifying and/or validating an APC assisted process via simulation is provided. The system comprises a film stack representation and a canonical model. The canonical model can predict process rates based at least in part upon an exposed material in the film stack representation. A solver component can also be provided to generate an updated recipe set-point according inputs and outputs of the canonical model.

Abstract: Systems and methodologies are provided that adapt and control desired fabrication processes by utilizing a control model based solution. A suitable control model is obtained or derived from one or more other control models. A formulaic description is then obtained that predicts one or more desired outputs based on various process settings and inputs. A suitable solution to the description that achieves the desired outputs and is relatively close to ideal processing conditions is obtained utilizing a heuristic. The solution includes process control parameters or settings that are employed to control and/or modify a fabrication process.