Patents by Inventor Sukhjiban Dosanjh

Sukhjiban Dosanjh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Opto-electronic device
    Patent number: 8847357
    Abstract: The present invention provides a current blocking structure for electronic devices, preferably optoelectronic devices. The current blocking structure comprises a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer and a first p-type semiconductor material layer wherein the n-type Ru—InP layer is less than 0.6 ?m thick. The semiconductor material arrangement and p-type semiconductor material layer form a current blocking p-n junction. The current blocking structure may further comprise other n-type layers and/or multiple n-type Ru—InP layers and/or intrinsic/undoped layers wherein the n-type Ru—InP layers may be thicker than 0.6 ?m.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: September 30, 2014
    Assignee: The Centre for Intergrated Photonics Limited
    Inventors: Sukhjiban Dosanjh, Ian Lealman, Gordon Burns, Michael Robertson
  • OPTO-ELECTRONIC DEVICE
    Publication number: 20130200492
    Abstract: The present invention provides a current blocking structure for electronic devices, preferably optoelectronic devices. The current blocking structure comprises a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer and a first p-type semiconductor material layer wherein the n-type Ru—InP layer is less than 0.6 ?m thick. The semiconductor material arrangement and p-type semiconductor material layer form a current blocking p-n junction. The current blocking structure may further comprise other n-type layers and/or multiple n-type Ru—InP layers and/or intrinsic/undoped layers wherein the n-type Ru—InP layers may be thicker than 0.6 ?m.
    Type: Application
    Filed: August 9, 2012
    Publication date: August 8, 2013
    Applicant: The Centre for Integrated Photonics Limited
    Inventors: Sukhjiban Dosanjh, Ian Lealman, Gordon Burns, Michael Robertson