Abstract: A partial memory die is removed from an edge of a wafer such that the partial memory die is missing a portion of the memory structure that was not printed on the wafer. A usable portion of the incomplete memory structure is determined and one or more rectangular zones in the usable portion of the incomplete memory structure are identified. During operation of the memory system, the memory system receives logical addresses for memory operations to be performed on the partial memory die and determines physical addresses that corresponding to the logical addresses. The memory system performs an out of bounds response for a physical address that is on the partial memory die but outside of the one or more rectangular zones. The memory system performs memory operations for physical addresses that are inside the one or more rectangular zones.

Abstract: A partial memory die is removed from an edge of a wafer such that the partial memory die is missing a portion of the memory structure that was not printed on the wafer. A usable portion of the incomplete memory structure is determined and one or more rectangular zones in the usable portion of the incomplete memory structure are identified. During operation of the memory system, the memory system receives logical addresses for memory operations to be performed on the partial memory die and determines physical addresses that corresponding to the logical addresses. The memory system performs an out of bounds response for a physical address that is on the partial memory die but outside of the one or more rectangular zones. The memory system performs memory operations for physical addresses that are inside the one or more rectangular zones.

Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.

Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.

Abstract: A memory system performs verification when writing to memory. It is possible that the memory system may be missing some components (or components may be otherwise unavailable). To account for missing or unavailable components when performing verification, the memory system uses a pattern of data that includes a mask identifying the missing or unavailable components. The mask is used to force a predetermined result of the verification for the missing or unavailable portions of the memory structure so that results of the verification that correspond to the missing or unavailable components are not counted as errors.

Abstract: Circuitry and method for detecting occurrence of a reflow process to an embedded storage device are disclosed. A temperature sensing device includes a resistor, a temperature sensor, and a comparator. The first terminal of the resistor is coupled to a voltage source, and the second terminal of the resistor is coupled to both the first terminal of the temperature sensor and the first input of the comparator. The second terminal of the temperature sensor is grounded and the second input of the comparator is coupled to a reference voltage. The resistance state of the temperature sensor changes from a first resistance state to a second resistance state when the temperature surrounding the temperature sensor reaches a threshold. The comparator generates an output based on the resistance changes of the temperature sensor. The generated output may indicate whether a reflow process has occurred to the embedded storage device.

Abstract: Circuitry and method for detecting occurrence of a reflow process to an embedded storage device are disclosed. A temperature sensing device includes a resistor, a temperature sensor, and a comparator. The first terminal of the resistor is coupled to a voltage source, and the second terminal of the resistor is coupled to both the first terminal of the temperature sensor and the first input of the comparator. The second terminal of the temperature sensor is grounded and the second input of the comparator is coupled to a reference voltage. The resistance state of the temperature sensor changes from a first resistance state to a second resistance state when the temperature surrounding the temperature sensor reaches a threshold. The comparator generates an output based on the resistance changes of the temperature sensor. The generated output may indicate whether a reflow process has occurred to the embedded storage device.