Abstract: There are provided a laser irradiation apparatus, a laser irradiation method, and a semiconductor device manufacturing method that reduce irradiation unevenness of a laser beam. A laser irradiation apparatus includes a waveform shaping device (20). The waveform shaping device (20) includes a laser beam source (11), a first waveform shaping unit (30) that shapes the pulse waveform of a pulse laser beam by applying a delay according to an optical path length difference between two light beams (L11 and L12) branched by a first beam splitter (31), a wave plate that changes the polarization state of the pulse laser beam from the first waveform shaping unit (30), and a second waveform shaping unit (40) that shapes the pulse waveform of the pulse laser beam by applying a delay according to an optical path length difference between two light beams (L15 and L16) branched by a second beam splitter (41).

Abstract: A fluid level measurement system using a buoyant body includes a guide part installed in a direction perpendicular to the bottom surface of a fluid storage tank, and provided with a space in which a fluid can move therein; a buoyant body inserted into the guide part, and configured to float along the surface of the fluid inside the guide part; and a measurement part coupled to the top end of the guide part, and configured to measure the level of the surface of the fluid inside the fluid storage tank by transmitting a signal toward the buoyant body in the inner space of the guide part and then receiving a signal reflected from the buoyant body.

Abstract: A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.

Abstract: An annealed workpiece manufacturing method of irradiating a workpiece with laser light and annealing the workpiece includes a support step of supporting the workpiece, and an irradiation step of irradiating the supported workpiece with the laser light. In the support step, at least in a laser light irradiation area for the workpiece, the workpiece is supported by a cam member whose upper end height position is adjusted according to a rotation position.

Abstract: A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.

Abstract: A laser irradiation apparatus according to an embodiment includes an optical module which irradiates an object with laser light so as to form a linear irradiation region along a first direction and a beam damper which absorbs reflected light having been reflected by the object. The beam damper includes a member and a member fixed to the member. The member includes an eaves portion having an opening portion through which the reflected light passes. The eaves portion has a reflection surface which reflects, toward an internal space enclosed by the member and the member, reflected light having been reflected by the object.

Abstract: Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon film 3A through a light-transmittable member 4 that can transmit the laser light.

Abstract: A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

Abstract: A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) (1) includes a laser oscillator (10) that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument (100) for detecting first partial light and second partial light contained in the laser light, and a monitoring device (60) for comparing a detection result of the first partial light with a detection result of the second partial light.

Abstract: There are provided a laser irradiation apparatus, a laser irradiation method, and a semiconductor device manufacturing method that reduce irradiation unevenness of a laser beam. A laser irradiation apparatus includes a waveform shaping device (20). The waveform shaping device (20) includes a laser beam source (11), a first waveform shaping unit (30) that shapes the pulse waveform of a pulse laser beam by applying a delay according to an optical path length difference between two light beams (L11 and L12) branched by a first beam splitter (31), a wave plate that changes the polarization state of the pulse laser beam from the first waveform shaping unit (30), and a second waveform shaping unit (40) that shapes the pulse waveform of the pulse laser beam by applying a delay according to an optical path length difference between two light beams (L15 and L16) branched by a second beam splitter (41).

Abstract: A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.

Abstract: A laser processing apparatus includes: a laser light source that generates a laser beam; a first beam splitter on which the laser beam is incident; a second beam splitter on which the laser beam having passed through the first beam splitter is incident; and a homogenizer that controls an energy density of the laser beam emitted from the second beam splitter. The laser beam output from the homogenizer includes a p-polarized component and an s-polarized component, and a ratio of energy intensity of the p-polarized component to the s-polarized component is preferably not lower than 0.74 and not higher than 1.23 on a surface of the workpiece.

Abstract: A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101), a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Abstract: A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Abstract: Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon film 3A through a light-transmittable member 4 that can transmit the laser light.

Abstract: A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

Abstract: A laser processing apparatus includes: a laser light source that generates a laser beam; a first beam splitter on which the laser beam is incident; a second beam splitter on which the laser beam having passed through the first beam splitter is incident; and a homogenizer that controls an energy density of the laser beam emitted from the second beam splitter. The laser beam output from the homogenizer includes a p-polarized component and an s-polarized component, and a ratio of energy intensity of the p-polarized component to the s-polarized component is preferably not lower than 0.74 and not higher than 1.23 on a surface of the workpiece.

Abstract: A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Abstract: An annealed workpiece manufacturing method of irradiating a workpiece with laser light and annealing the workpiece includes a support step of supporting the workpiece, and an irradiation step of irradiating the supported workpiece with the laser light. In the support step, at least in a laser light irradiation area for the workpiece, the workpiece is supported by a cam member whose upper end height position is adjusted according to a rotation position.

Abstract: Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.