Abstract: A resist composition and a method of manufacturing a semiconductor device, the resist composition includes an organometallic compound, the organometallic compound including a central metal and ligands combined with the central metal; and an excess ligand compound, the excess ligand compound being combinable with the central metal via a coordination bond.

Abstract: A photoresist composition, a method of forming a pattern, and a method of synthesizing 6-nitrochrysene, the photoresist composition includes a polymer resin; a photo acid generator; a quencher; an organic solvent; and an etching resistance enhancer, wherein the etching resistance enhancer is represented by the following Chemical Formula 1,

Abstract: An extreme ultraviolet (EUV) photosensitive polymer includes a first repeating unit represented by Chemical Formula 1. (in Chemical Formula 1, R1 is a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a C6 to C18 aryl group, a haloaryl group, a C7 to C18 arylalkyl group, a C7 to C18 alkylaryl group, or a C6 to C18 haloaryl group, and R2 is a direct bond, a C1 to C10 alkylene group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, a C6 to C18 aryl group, a C7 to C18 arylalkyl group, or a C7 to C18 alkylaryl group).

Abstract: A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

Abstract: The present disclosure relates to a polymer for photoresist and a photoresist composition including the same. The polymer for photoresist may include a polymerization unit comprising a sensitizer, and a protection group. The polymerization unit may include a structure of chemical formula 1: wherein R1 is hydrogen, a halogen element, a methyl group, a trifluoromethyl group, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or unsubstituted arylalkyl group having 6 to 18 carbon atoms, and n is an integer of 1 to 100,000.

Abstract: An additive for a photoresist, a photoresist composition for a EUV including the same, and a method for manufacturing a semiconductor device using the same, the additive including a copolymer that includes a first repeating unit represented by the following Chemical Formula 1-1, and a second repeating unit represented by the following Chemical Formula 2, wherein a molar ratio of the first repeating unit to the second repeating unit is 7:3 to 2:8,

Abstract: A method for forming photoresist patterns and a semiconductor device on which a photoresist pattern manufactured according to the method is formed are disclosed. The method includes forming a preliminary photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer, the acrylic polymer including a structural unit containing a hydroxy group and a fluorine, and an acid compound on the preliminary photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an acetate-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition.

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: A resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine in a weight ratio of about 1:0.1 to about 1:50; and a solvent. A method of forming patterns uses the resist topcoat composition to form a topcoat over a patterned substrate.

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; at least one acid compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.

Abstract: Photoresist compositions improving the quality of a photoresist pattern, methods for forming a pattern using the same, and methods for fabricating a semiconductor device using the same are provided. The photoresist composition includes a photosensitive resin, a photoacid generator, a photoacid-labile additive comprising a structure of Formula 1-1, and optionally a solvent: Ar2—Y-PG2??[Formula 1-1] wherein Ar1 is a substituted or unsubstituted aromatic ring, Y is an ester group, an oxycarbonyl group, an acetal group, an amide group, or a thioester group, and PG2 is a substituted or unsubstituted secondary alkyl group, a substituted or unsubstituted tertiary alkyl group, a substituted or unsubstituted alkoxyalkyl group, a substituted or unsubstituted alkoxy group, or a substituted or unsubstituted alkyloxycarbonyl group.

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

Abstract: A resist composition including a polymer; a photoacid generator; and a material represented by Formula 1:

Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.

Abstract: A photoacid generator (PAG) and a photoresist composition, the PAG being represented by the following Chemical Formula (I): wherein, in Chemical Formula (I), L is sulfur (S) or iodine (I), R3 being omitted when L is I; R1, R2, and R3 are each independently a C1 to C10 alkyl, alkenyl, alkynyl, or alkoxy group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and L, or a C6 to C18 aryl, arylalkyl, or alkylaryl group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and L; AL is an acid-labile group; m is 1 to 4; and M is a C1 to C30 hydrocarbon group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and a sulfur atom.

Abstract: Provided is a photoresist composition including a plasma light absorber and a method of manufacturing semiconductor devices using the same. The photoresist composition may include a developable polymer, a photoacid generator, a plasma light absorber, and an organic solvent. The plasma light absorber may be relatively transmissive to light used with a photolithographic patterning process (e.g., ultraviolet light) to pattern a layer formed with the photoresist composition and be relatively absorptive to light created in a subsequent etching process (such as light generated from a plasma). When forming a semiconductor device, a patterned photoresist layer may be more precisely generated and may better maintain is desired properties when used to etch various target layers of the semiconductor device.

Abstract: Provided is a method of fabricating an integrated circuit device, the method including: forming, on a substrate, a developable bottom anti-reflective coating (DBARC) layer including a chemically amplified polymer; forming, on the DBARC layer, a photoresist layer including a non-chemically amplified resin and a photoacid generator (PAG); generating an acid from the PAG in a first region selected from the photoresist layer, by exposing the first region; diffusing the acid in the exposed first region into a first DBARC region of the DBARC layer, the first DBARC region facing the first region; and removing the first region and the first DBARC region by developing the photoresist layer and the DBARC layer.