Abstract: The present invention provides a composite polishing pad for CMP, and a method for producing the same. The composite polishing pad for CMP comprises: a soft polymer substrate layer including a plurality of protrusions formed on the upper surface thereof; a carbon nanotube layer including carbon nanotubes embedded in and bound to the upper portion of the substrate layer; and a hard polymer coating layer having the carbon nanotubes protruding outwardly on the upper portion of the carbon nanotube layer embedded and bound thereto.

Abstract: The present disclosure provides a polishing pad and a method of manufacturing a semiconductor device using the same. The method includes disposing a target layer on a semiconductor substrate and performing a chemical mechanical polishing process on the target layer using a polishing pad including a plurality of polishing protrusions facing the target layer. Each of the polishing protrusions includes a protruding portion and a surface layer at least partially covering the protruding portion, wherein the protruding portion is more elastic than the surface layer, and wherein the surface layer is harder than the protruding portion.

Abstract: Various embodiments of the present disclosure relate to a fixed-abrasive pad using vertically aligned carbon nanotubes and a fabrication method for the same. The fixed-abrasive pad may include a pad made of a polymer material; and vertically aligned carbon nanotubes (VACNT) which are configured such that one side thereof is impregnated into the pad and the other side protrudes from the pad.