Abstract: Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (HWCVD) chamber are provided herein. In some embodiments, a method for cleaning a surface of a substrate may include providing a substrate having a material disposed on a surface of the substrate to a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; and exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the material from the surface of the substrate.

Abstract: Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer.