Abstract: The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8. Rd=er2/er1??[Equation 1] In the Equation 1, the er1 value is an etching rate of the first light shielding layer measured by etching with argon gas. The er2 value is an etching rate of the second light shielding layer measured by etching with argon gas. In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.

Abstract: A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 20 of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 20 of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1. AI ? 1 = XM ? 1 XQ ? 1 XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.

Abstract: A blank mask includes a light-transmitting substrate; and a light-shielding film, disposed on the light-transmitting substrate, including a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer. The second light-shielding layer includes at least one of a transition metal, oxygen, or nitrogen, or any combination thereof. A reflectance of a surface of the light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less. A hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.

Abstract: A blank mask includes a light-transmitting substrate; and a light-shielding film on the light-transmitting substrate. The light-shielding film includes a transition metal and oxygen, and a scum formation time required to generate scum is 120 minutes or more when light with a wavelength of 172 nm and an intensity of 10 kJ/cm2 is applied on the light-shielding film.

Abstract: A blank mask includes a transparent substrate and a light shielding film disposed on the transparent substrate. A surface of the light shielding film has a controlled power spectrum density value at a spatial frequency of 1 ?m?1 to 10 ?m?1. The surface of the light shielding film has a controlled minimum power spectrum density value at the spatial frequency of 1 ?m?1 to 10 ?m?1. An Rq value of the surface of the light shielding film is 0.25 nm to 0.55 nm.

Abstract: The method of preparing a laminate includes: preparing a process target, which is a laminate before being processed, where a light-shielding film has been disposed; and preparing a cleaned laminate through a first cleaning including applying UV rays and carbonated water to the process target, wherein the light-shielding film includes a transition metal and an element selected from the group consisting of oxygen, nitrogen, and carbon.

Abstract: A method and apparatus for forming a layer including a light transmitting substrate, and a light shielding film disposed on the light transmitting substrate, and a phase shift film disposed between the light transmitting substrate and the light shielding film. A center measuring area based on the center of the light shielding film and an edge measuring area being distant by 20 mm from the edge of the light shielding film. The center measuring area and the edge measuring area are respectively squares having a side of 20 ?m.

Abstract: A blank mask includes a transparent substrate and a multilayer light shielding film disposed on the transparent substrate, the multilayer light shielding film including a transition metal and at least any one between oxygen and nitrogen, the multilayer light shielding film including a first light shielding film and a second light shielding film disposed on the first light shielding film, and the multilayer light shielding film having an EA (Edge side Area damaged) value of 2 nm2 or less

Abstract: The blank mask according to one embodiment of the present disclosure comprises a transparent substrate and a multilayer light shielding film disposed on the transparent substrate. The multilayer light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The multilayer light shielding film comprises a first light shielding film and a second light shielding film disposed on the first light shielding film. The multilayer light shielding film comprises total nine parts that are formed by trisection in a width direction and a length direction of an upper surface of the multilayer light shielding film. Each part of the multilayer light shielding film comprises a measuring range disposed in a side thereof.

Abstract: A blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein when an optical density of the light shielding film is measured ten times by a light with a wavelength of 193 nm, a standard deviation of measured optical density is 0.009 or less, is disclosed.

Abstract: A blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface of the light shielding film has a first contact angle of 40° to 45° measured by using diiodo-methane as a first liquid contacting the surface of the light shielding film, is disclosed.

Abstract: A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.

Abstract: Disclosed is a blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, wherein when a surface of the light shielding film includes nine sectors formed by trisecting the surface of the light shielding film vertically and horizontally, each of the nine sectors has a Rsk value, respectively, and an average value of the Rsk values of the nine sectors is equal to ?0.64 or more and less than or equal to 0, where Rsk value is a height symmetry of the surface of the light shielding film measured in accordance with ISO_4287, and wherein an average value of Rku values, which are kurtosis of the surface of the light shielding film measured in accordance with ISO_4287, of the nine sectors is 3 or less.

Abstract: A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1: SA1=?SL×tan ???[Equation 1-1] where, in the Equation 1-1, the ?SL is an interfacial energy between the light shielding film and a pure water and ? is a contact angle of the light shielding film measured with the pure water, is disclosed.

Abstract: The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8. Rd=er2/er1??[Equation 1] In the Equation 1, the er1 value is an etching rate of the first light shielding layer measured by etching with argon gas. The er2 value is an etching rate of the second light shielding layer measured by etching with argon gas. In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.

Abstract: The present disclosure relates to a blank mask including: a transparent substrate; and a light shielding film disposed on the transparent substrate, wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a Mtr value of Equation 1 below of a surface of the light shielding film is 6 or less: Mtr=|Rsk|*Rku ??[Equation 1] where, in the Equation 1, |Rsk| is an absolute value of an Rsk value, which is a height skewness of the surface of the light shielding film, and Rku is kurtosis of the surface of the light shielding film.

Abstract: A photomask blank includes a light-transmitting substrate, and a shading layer part disposed on the light-transmitting substrate, the shading layer part including a first shading layer having a first hardness and a second shading layer having a second hardness. The first shading layer is disposed closer to the light-transmitting substrate than the second shading layer, and a value of the first hardness is larger that a value of the second hardness.

Abstract: Disclosed is a photomask comprising: a transparent substrate; and a multi-layer light shielding pattern film disposed on the transparent substrate, wherein the multi-layer light shielding pattern film comprises: a first light shielding film; and a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below: 0 nm<Wr?Wo?3 nm??[Equation 1] where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH4OH, H2O2, and H2O.

Abstract: A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 2? of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 2? of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1. AI ? ? 1 = XM ? ? 1 XQ ? ? 1 XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.

Abstract: The present disclosure relates to a blank mask and the like, and comprises a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The blank mask has a TFT1 value of 0.25 ?m/100° C. or less expressed by Equation 1 below: TFT ? ? 1 = ? ? ? PM T ? ? 2 - T ? ? 1 [ Equation ? ? 1 ] where, when the thermal variation of the processed blank mask, which is formed by processing the thickness of the transparent substrate of the blank mask to be 0.6 mm and removing the light shielding film, is analyzed in a thermomechanical analyzer, the measuring temperature of the thermomechanical analyzer is increased from T1 to T2, and ?PM is a position change of the upper surface of the phase shift film in the thickness direction at T2, based on a position of the upper surface of the phase shift film at T1.