Patents by Inventor Sultan Malik
Sultan Malik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948828Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.Type: GrantFiled: January 16, 2020Date of Patent: April 2, 2024Assignee: Applied Materials, Inc.Inventors: Sultan Malik, Srinivas D. Nemani, Adib M. Khan, Qiwei Liang
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Patent number: 11749555Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.Type: GrantFiled: December 6, 2019Date of Patent: September 5, 2023Assignee: Applied Materials, Inc.Inventors: Sultan Malik, Srinivas D. Nemani, Qiwei Liang, Adib M. Khan
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Patent number: 11361978Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.Type: GrantFiled: July 10, 2020Date of Patent: June 14, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Adib M. Khan, Qiwei Liang, Sultan Malik, Srinivas D. Nemani
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Patent number: 11110383Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: GrantFiled: June 9, 2020Date of Patent: September 7, 2021Assignee: Applied Materials, Inc.Inventors: Adib Khan, Qiwei Liang, Sultan Malik, Srinivas Nemani, Rafika Smati, Joseph Ng, John O'Hehir
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Publication number: 20210225687Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.Type: ApplicationFiled: January 16, 2020Publication date: July 22, 2021Inventors: Sultan MALIK, Srinivas D. NEMANI, Adib M. KHAN, Qiwei LIANG
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Publication number: 20200368666Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: ApplicationFiled: June 9, 2020Publication date: November 26, 2020Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Srinivas NEMANI, Rafika Smati, Joseph Ng, John O'Hehir
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Publication number: 20200343103Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.Type: ApplicationFiled: July 10, 2020Publication date: October 29, 2020Inventors: Adib M. KHAN, Qiwei LIANG, Sultan MALIK, Srinivas D. NEMANI
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Patent number: 10748783Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.Type: GrantFiled: July 12, 2019Date of Patent: August 18, 2020Assignee: Applied Materials, Inc.Inventors: Adib M. Khan, Qiwei Liang, Sultan Malik, Srinivas D. Nemani
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Patent number: 10704141Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.Type: GrantFiled: April 12, 2019Date of Patent: July 7, 2020Assignee: Applied Materials, Inc.Inventors: Sultan Malik, Srinivas D. Nemani, Qiwei Liang, Adib Khan, Maximillian Clemons
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Publication number: 20200185260Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.Type: ApplicationFiled: December 6, 2019Publication date: June 11, 2020Inventors: Sultan MALIK, Srinivas D. NEMANI, Qiwei LIANG, Adib M. KHAN
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Patent number: 10675581Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: GrantFiled: August 6, 2018Date of Patent: June 9, 2020Assignee: Applied Materials, Inc.Inventors: Adib Khan, Qiwei Liang, Sultan Malik, Srinivas Nemani, Rafika Smati, Joseph Ng, John O'Hehir
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Publication number: 20200038797Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: ApplicationFiled: August 6, 2018Publication date: February 6, 2020Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Srinivas NEMANI, Rafika Smati, Joseph Ng, John O'Hehir
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Publication number: 20200035513Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A steam delivery module is in fluid communication with the high pressure process chamber and is configured to deliver steam to the process chamber. The steam delivery module includes a boiler and a steam reservoir.Type: ApplicationFiled: July 12, 2019Publication date: January 30, 2020Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Srinivas D. NEMANI
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Publication number: 20200035509Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.Type: ApplicationFiled: July 12, 2019Publication date: January 30, 2020Inventors: Adib M. KHAN, Qiwei LIANG, Sultan MALIK, Srinivas D. NEMANI
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Patent number: 10529603Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.Type: GrantFiled: March 4, 2019Date of Patent: January 7, 2020Assignee: Micromaterials, LLCInventors: Qiwei Liang, Srinivas D. Nemani, Adib M. Khan, Venkata Ravishankar Kasibhotla, Sultan Malik, Sean Kang, Keith Tatseun Wong
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Publication number: 20190368035Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.Type: ApplicationFiled: April 12, 2019Publication date: December 5, 2019Inventors: Sultan MALIK, Srinivas D. NEMANI, Qiwei LIANG, Adib KHAN, Maximillian CLEMONS
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Patent number: 10468285Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.Type: GrantFiled: July 6, 2017Date of Patent: November 5, 2019Assignee: Applied Materials, Inc.Inventors: Toan Q. Tran, Sultan Malik, Dmitry Lubomirsky, Shambhu N. Roy, Satoru Kobayashi, Tae Seung Cho, Soonam Park, Shankar Venkataraman
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Publication number: 20190198367Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.Type: ApplicationFiled: March 4, 2019Publication date: June 27, 2019Inventors: Qiwei LIANG, Srinivas D. NEMANI, Adib M. KHAN, Venkata Ravishankar KASIBHOTLA, Sultan MALIK, Sean KANG, Keith Tatseun WONG
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Publication number: 20190119769Abstract: A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.Type: ApplicationFiled: December 21, 2018Publication date: April 25, 2019Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Keith Tatseun WONG, Srinivas D. NEMANI
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Patent number: D941787Type: GrantFiled: March 3, 2020Date of Patent: January 25, 2022Assignee: Applied Materials, Inc.Inventors: Sultan Malik, Srinivas D. Nemani, Adib M. Khan, Qiwei Liang