Abstract: Systems, methods, and devices are provided to efficiently share an antenna between multiple communication systems and allow for the communication systems to be simultaneously connected to the antenna with less attenuation and/or no fluctuation in signal strength. Communication circuitry may include an antenna that transmits and receives electromagnetic radiation. The communication circuitry may also include an antenna port that provides primary access to the antenna with a first attenuation via an antenna port input. Additionally, the communication circuitry may include a coupler attached to the antenna port. The coupler may provide secondary access to the antenna with a second attenuation.

Abstract: Systems, methods, and devices are provided to efficiently share an antenna between multiple communication systems and allow for the communication systems to be simultaneously connected to the antenna with less attenuation and/or no fluctuation in signal strength. Communication circuitry may include an antenna that transmits and receives electromagnetic radiation. The communication circuitry may also include an antenna port that provides primary access to the antenna with a first attenuation via an antenna port input. Additionally, the communication circuitry may include a coupler attached to the antenna port. The coupler may provide secondary access to the antenna with a second attenuation.

Abstract: Illustrative embodiments of power amplifiers and associated methods are disclosed. In at least one embodiment, a method may include fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers; removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier; and securing the SOI substrate, after removing at least some of the second silicon layer, to an electrically non-conductive and thermally conductive substrate.

Abstract: Illustrative embodiments of power amplifiers are disclosed. In one embodiment, a power amplifier includes a plurality of transistors formed on a silicon-on-insulator (SOI) substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate. The power amplifier also includes a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors. The plurality of transistors are electrically coupled in a series stack, with an output of the power amplifier being provided across the series stack.

Abstract: Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.

Abstract: Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.