Patents by Inventor Sum Geun Lee
Sum Geun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10141480Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: GrantFiled: November 27, 2013Date of Patent: November 27, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee
-
Patent number: 10128306Abstract: A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.Type: GrantFiled: January 9, 2017Date of Patent: November 13, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
-
Patent number: 10069038Abstract: Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconduct or layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.Type: GrantFiled: June 5, 2015Date of Patent: September 4, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Jae Kwon Kim, Sum Geun Lee, Kyung Wan Kim, Yeo Jin Yoon, Duk Il Suh, Ji Hye Kim
-
Publication number: 20170236865Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.Type: ApplicationFiled: April 27, 2017Publication date: August 17, 2017Inventors: Jae Kwon KIM, Yeo Jin YOON, Jong Kyu KIM, So Ra LEE, Sum Geun LEE, Hyun Haeng LEE
-
Patent number: 9680060Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.Type: GrantFiled: January 22, 2016Date of Patent: June 13, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Jae Kwon Kim, Yeo Jin Yoon, Jong Kyu Kim, So Ra Lee, Sum Geun Lee, Hyun Haeng Lee
-
Patent number: 9673355Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.Type: GrantFiled: March 28, 2014Date of Patent: June 6, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Jin Cheol Shin, Yeo Jin Yoon, Kyoung Wan Kim, Jeong Hee Yang
-
Publication number: 20170148845Abstract: A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.Type: ApplicationFiled: January 9, 2017Publication date: May 25, 2017Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE, Chung Hoon LEE
-
Patent number: 9577157Abstract: A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.Type: GrantFiled: March 14, 2016Date of Patent: February 21, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
-
Publication number: 20170012173Abstract: A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.Type: ApplicationFiled: September 22, 2016Publication date: January 12, 2017Inventors: Sum Geun LEE, Jin Cheol SHIN, Yeo Jin YOON, Kyoung Wan KIM, Jeong Hee YANG
-
Publication number: 20160197243Abstract: A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.Type: ApplicationFiled: March 14, 2016Publication date: July 7, 2016Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE, Chung Hoon LEE
-
Publication number: 20160172537Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.Type: ApplicationFiled: January 22, 2016Publication date: June 16, 2016Inventors: Jae Kwon KIM, Yeo Jin YOON, Jong Kyu KIM, So Ra LEE, Sum Geun LEE, Hyun Haeng LEE
-
Patent number: 9349912Abstract: Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.Type: GrantFiled: March 28, 2014Date of Patent: May 24, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hee Ye, Dae Sung Cho, Won Cheol Seo, Young Eun Yang, Sum Geun Lee
-
Patent number: 9343631Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.Type: GrantFiled: January 27, 2015Date of Patent: May 17, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
-
Patent number: 9324919Abstract: A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.Type: GrantFiled: January 6, 2015Date of Patent: April 26, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
-
Patent number: 9269745Abstract: Exemplary embodiments of the present invention provide a light emitting diode including light emitting units disposed on a substrate, and wires connecting the light emitting units to each other, wherein the light emitting units each include a parallelogram-shaped light emitting unit having two acute angles and two obtuse angles, or a triangular light emitting unit having three acute angles.Type: GrantFiled: November 22, 2013Date of Patent: February 23, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Jae Kwon Kim, Yeo Jin Yoon, Jong Kyu Kim, So Ra Lee, Sum Geun Lee, Hyun Haeng Lee
-
Patent number: 9252326Abstract: The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units.Type: GrantFiled: January 19, 2011Date of Patent: February 2, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hee Ye, Dae Sung Cho, Won Cheol Seo, Young Eun Yang, Sum Geun Lee
-
Patent number: 9236532Abstract: The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer.Type: GrantFiled: December 19, 2011Date of Patent: January 12, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Jin Cheol Shin, Yeo Jin Yoon
-
Patent number: 9202972Abstract: The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units.Type: GrantFiled: January 19, 2011Date of Patent: December 1, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hee Ye, Dae Sung Cho, Won Cheol Seo, Young Eun Yang, Sum Geun Lee
-
Publication number: 20150270441Abstract: Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconduct or layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.Type: ApplicationFiled: June 5, 2015Publication date: September 24, 2015Inventors: Jae Kwon Kim, Sum Geun Lee, Kyung Wan Kim, Yeo Jin Yoon, Duk Il Suh, Ji Hye Kim
-
Publication number: 20150207039Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.Type: ApplicationFiled: January 27, 2015Publication date: July 23, 2015Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE, Chung Hoon LEE