Patents by Inventor Sumi Krishnaswami

Sumi Krishnaswami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming SiC MOSFETs with high inversion layer mobility
    Patent number: 8536066
    Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: September 17, 2013
    Assignee: Cree, Inc.
    Inventors: Mrinal K. Das, Brett Hull, Sumi Krishnaswami
  • METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY
    Publication number: 20100221924
    Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.
    Type: Application
    Filed: May 10, 2010
    Publication date: September 2, 2010
    Inventors: Mrinal K. Das, Brett Hull, Sumi Krishnaswami
  • Methods of forming SiC MOSFETs with high inversion layer mobility
    Patent number: 7727904
    Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: June 1, 2010
    Assignee: Cree, Inc.
    Inventors: Mrinal K. Das, Brett Hull, Sumi Krishnaswami
  • Methods of forming SIC MOSFETs with high inversion layer mobility
    Publication number: 20080233285
    Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.
    Type: Application
    Filed: July 14, 2006
    Publication date: September 25, 2008
    Inventors: Mrinal K. Das, Brett Hull, Sumi Krishnaswami