Abstract: A plasma processing apparatus 100 used to execute a specific type of processing such as plasma processing on a workpiece by supplying a processing gas into a chamber 110 while applying high-frequency power to generate plasma includes a stage 108 on which the workpiece is placed and a stage supporting unit 124 that holds the stage 108. Bellows 120 and 122 are disposed above and below the stage supporting unit 124 to support the stage 108 in a horizontal state relative to the chamber 110. Thus, a plasma processing apparatus that does not allow the workpiece stage to become tilted, affords ease of maintenance and is capable of stable processing is provided. In addition, the internal spaces at the bellows 120 and 122 are used as an exhausting pipe to achieve efficient and uniform exhaustion of the chamber 110.

Abstract: A film deposition apparatus of the present invention includes a container forming a processing chamber for processing a target object, a mounting table which is provided in the processing chamber and on which the target object is mounted, a first heating apparatus provided in the mounting table, for heating the target object mounted on the mounting table, a first gas supply section provided in the container, for supplying processing gas into the processing chamber, the processing gas forming a high-melting-point metal-film layer on the target object mounted on the mounting table, a movable clamp for clamping a periphery of the target object and holding the target object on the mounting table, a second heating apparatus formed separately from the clamp, for heating the clamp indirectly, a gas flow path formed between the clamp and the second heating apparatus when the clamp is moved to a position where the clamp clamps the target object, and a second gas supply section for causing backside gas to flow into the

Abstract: A processing container, a pedestal for mounting wafer W, a processing gas feeder for feeding a processing gas to the front surface of the wafer W, an annular substrate-holding member for holding the wafer W, a purge gas feeder for feeding purge gas into a space formed at the backside surface side of the wafer W, a purge gas flow path for upwardly inducing a purge gas inside said space from between the wafer W and said substrate holding member, and a gas discharge mechanism for discharging said purge gas in a case that a pressure in said space becomes higher than a pressure outside said space within said processing container by a predetermined value. Further, a susceptor is composed of a material with thermal radiation transmissivity equal to or lower than dissimilar members such as temperature sensors contained in the susceptor.

Abstract: A processing apparatus of the invention includes: a processing vessel in which a vacuum can be created; a stage disposed in the processing vessel for supporting an object to be processed thereon; a clamping member supported above the stage and capable of pressing down a peripheral part of the object to be processed mounted on the stage to fixedly hold the object to be processed on the stage; an elastic member for giving a force to cause the clamping member to press down the peripheral part of the object to be processed mounted on the stage; and an elastic-member cover substantially entirely covering the elastic member.

Abstract: A susceptor according to the present invention is set in a process chamber for subjecting an object to a specific process and can bear the object thereon. The susceptor includes a stepped section for defining a recessed bearing region capable of bearing the object therein and positioning the object on the susceptor, and at least one groove formed in the bearing region and used to allow a gas remaining in a gap between the object and that part of the susceptor which includes the stepped section to get out of the bearing region.

Abstract: A showerhead for use in a process chamber for performing a predetermined process on an object, designed to apply a prescribed gas in the process chamber. The showerhead comprises a main body, a cover, and a support. The main body has a an internal space into which the gas to be supplied into the process chamber is introduced and an opening which opens to the process chamber. The cover closes the opening of the main body and has a plurality of gas-applying holes for applying the gas from the main body. The support supports the cover to the main body and provides a predetermined clearance between the cover and the main body.

Abstract: An anti-adhesion film, which is difficult for the deposited film to adhere thereto, is formed on the inner surface of a process chamber. A process gas is supplied from a gas supply unit to that position in the process chamber which is opposed to a table, whereupon a metal film or metallic compound film is deposited on the surface of the object. In the film deposition process, the anti-adhesion film serves considerably to reduce the build-up of the metal film deposited on the inner surface of the process chamber, especially that surface of the gas supply unit which is opposed to the table. Although at least a maintenance operation such as wet cleaning is necessary, therefore, the frequency of such operation can be lowered substantially, so that the operating efficiency of the apparatus can be improved.

Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

Abstract: A processing chamber having a heating device for heating the interior thereof to a required temperature, and a holding device with at least three separate holding elements is disclosed. A processing gas feed port and processing gas passages are provided in a cap which is connected to a processing chamber and closes an opening in the upper surface of the processing chamber, and the processing gas feed port and the processing gas passages are connected by a connection pipe. The processing chamber is connected to processing gas sources and has processing gas introduction passages formed in a side wall thereof and communicated with the processing gas passages. Seal members are provided around open ends of either of the processing gas passages or the processing gas introduction passages in the surfaces of the processing chamber and the cap opposed to each other.

Abstract: The present invention relates to a surface processing apparatus which performs heating processing of an object of heating which is mounted on a mounting device provided inside a process container, and which includes a plural number of lamps provided so as to oppose a rear surface of a processing surface of an object of processing, a rotating unit which has the plural number of lamps mounted to it in a ring shape, and a drive unit which drives the rotating unit. Also, the present invention relates to a processing apparatus for leading a process gas from a gas supply tube to a gas chamber partitioned inside a process container, and which blows process gas from an outlet of the gas chamber and onto an object of processing which is mounted on a mounting device provided inside the process container, and which includes a plural number of partition plates each provided with a plural number of through holes, being provided at required intervals in a direction of gas flow and inside the gas chamber.

Abstract: An electric probing test machine including a test stage unit which is constructed as an independent component of at least one system and used to test the electrical characteristics of a wafer by having the wafer on the stage contacted by a multitude of probes and a loading/unloading unit which is constructed as an independent component of at least one system and used to bring a wafer from a wafer cassette to the stage of the test stage unit or from the stage of the test stage unit to the wafer cassette. The loading/unloading unit is combined with the test stage unit in such a way that the loading/unloading unit can be separated and moved away from the test stage unit.

Abstract: A carrier for transferring a semiconductor wafer one by one includes a tray portion to load the wafer thereon the wafer submitted for processing, the tray portion having a groove which is formed therein for unloading the wafer therefrom, and mechanism for positioning the tray portion relative to a predetermined location of the drawer. A handling apparatus for the carrier includes a sampling case mounted to the frame of a wafer probing machine and having formed therein a first opening communicating with the outside of the machine and a second opening communicating with the interior of the machine, a drawer adapted to go into and come out of the case through the first opening and plural pairs of guide-rollers to guide the drawer between the first and second openings of the case.