Abstract: A semiconductor apparatus including: a substrate 12; a plurality of electrode pads 20 formed on a surface of the substrate 12; and a protection film 14 having a plurality of through holes 16 formed in one-to-one correspondence with the electrode pads 20, and covering circumferential edge portions of the electrode pads 20 and the surface of the substrate 12 except for areas under the electrode pads 20. An inner wall of each through hole 16 is a slant surface 22 slanted toward outside of the through hole 16. A plurality of metal layers 24 have been formed, each covering an exposed part of each electrode pad 20 not covered by the protection film 14 and an area of each slant surface extending from the exposed part up to a middle of the slant surface. A plurality of bumps 18 have been connected one-to-one with the metal layers 24.

Abstract: A semiconductor substrate structure includes an electrode pad formed on a semiconductor substrate, a protective film formed on the semiconductor substrate with a distance from the electrode pad, and a bump formed on the electrode pad. The protective film has a barrier portion surrounding the electrode pad. The barrier portion has a height different from a height of a part of the protective film other than the barrier portion.

Abstract: An electrostatic atomizer equipped with an electrostatic atomization pole having superior resistance to migration. The atomizer includes an electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.

Abstract: A semiconductor chip includes at least one electrode pad formed on a substrate; a protective film formed on the substrate and the electrode pad, and having an opening exposing the electrode pad; an under barrier metal layer formed on the electrode pad to cover an edge of the opening of the protective film; and a bump formed on the under barrier metal layer. A contact angle between the under barrier metal layer and the protective film is less than 90° at an edge of the under barrier metal layer. A contact angle between the bump and the under barrier metal layer is less than 90° at an edge of the bump.

Abstract: A semiconductor apparatus including: a substrate 12; a plurality of electrode pads 20 formed on a surface of the substrate 12; and a protection film 14 having a plurality of through holes 16 formed in one-to-one correspondence with the electrode pads 20, and covering circumferential edge portions of the electrode pads 20 and the surface of the substrate 12 except for areas under the electrode pads 20. An inner wall of each through hole 16 is a slant surface 22 slanted toward outside of the through hole 16. A plurality of metal layers 24 have been formed, each covering an exposed part of each electrode pad 20 not covered by the protection film 14 and an area of each slant surface extending from the exposed part up to a middle of the slant surface. A plurality of bumps 18 have been connected one-to-one with the metal layers 24.

Abstract: A semiconductor substrate structure includes an electrode pad formed on a semiconductor substrate, a protective film formed on the semiconductor substrate with a distance from the electrode pad, and a bump formed on the electrode pad. The protective film has a barrier portion surrounding the electrode pad. The barrier portion has a height different from a height of a part of the protective film other than the barrier portion.

Abstract: An electrostatic atomizer equipped with an electrostatic atomization pole having superior migration-proof. The atomizer comprises the electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.

Abstract: An electrostatic atomizer equipped with an electrostatic atomization pole having superior resistance to migration. The atomizer includes an electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.

Abstract: An electrostatic atomizer equipped with an electrostatic atomization pole having superior migration-proof. The atomizer comprises the electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.