Abstract: A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory layer includes at least a first layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature and a second layer formed from a resistive material, and wherein the resistance value of the second layer is smaller than the resistance value of the first layer in the amorphous phase, but is larger than the resistance value of the first layer in the crystalline phase.

Abstract: A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory layer includes at least a first layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature and a second layer formed from a resistive material, and wherein the resistance value of the second layer is smaller than the resistance value of the first layer in the amorphous phase, but is larger than the resistance value of the first layer in the crystalline phase.

Abstract: A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30 provided between the first and second electrode layers 26 and 28 and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer 30 includes a plurality of mutually isolated sub-memory layers 32, 34, 36, and 38 between the first and second electrode layers 26 and 28.

Abstract: To reduce the voltage required to cause a phase transition from an amorphous phase to a crystalline phase, a phase-change memory device (1) comprises: a first electrode (6); a second electrode (8); and a memory layer (14) provided between the first (6) and second (8) electrodes, wherein the memory layer (14) includes at least a first layer (10) formed from a phase-change material which is stable in either the amorphous phase or the crystalline phase at room temperature, and a second layer (12) formed from a resistive material, and wherein the resistance value of the second layer (12) is smaller than the resistance value of the first layer (10) in the amorphous phase, but is larger than the resistance value of the first layer (10) in the crystalline phase.

Abstract: A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30 provided between the first and second electrode layers 26 and 28 and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer 30 includes a plurality of mutually isolated sub-memory layers 32, 34, 36, and 38 between the first and second electrode layers 26 and 28.

Abstract: A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30 provided between the first and second electrode layers 26 and 28 and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer 30 includes a plurality of mutually isolated sub-memory layers 32, 34, 36, and 38 between the first and second electrode layers 26 and 28.

Abstract: A cantilever type sensor includes a cantilever, an actuator that oscillates the cantilever, and a sensor provided at the cantilever so as to detect an oscillation condition of the cantilever. Further, the cantilever type sensor includes a control unit that controls the actuator so as to cause the cantilever to be subjected to pulse excitation, and a measurement unit that measures a physical quantity related to a measurement object, based on a change in pulse response detected in the sensor.

Abstract: Minute masses of a plurality of measuring objects are measured at a time. A multi-lever is prepared, in which a plurality of cantilevers, each having a buried piezoresistance element, is provided. Different measuring object attracting substances are coated on the multi-lever. The multi-lever is driven by a single vibration exciting device. The vibrational frequency is swept within a predetermined range, and the resonance frequency of each cantilever is detected. Frequency changes before putting in and after putting in the measuring object are detected, and based on this, the mass changes are calculated.

Abstract: A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30 provided between the first and second electrode layers 26 and 28 and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer 30 includes a plurality of mutually isolated sub-memory layers 32, 34, 36, and 38 between the first and second electrode layers 26 and 28.

Abstract: To reduce the voltage required to cause a phase transition from an amorphous phase to a crystalline phase, a phase-change memory device (1) comprises: a first electrode (6); a second electrode (8); and a memory layer (14) provided between the first (6) and second (8) electrodes, wherein the memory layer (14) includes at least a first layer (10) formed from a phase-change material which is stable in either the amorphous phase or the crystalline phase at room temperature, and a second layer (12) formed from a resistive material, and wherein the resistance value of the second layer (12) is smaller than the resistance value of the first layer (10) in the amorphous phase, but is larger than the resistance value of the first layer (10) in the crystalline phase.

Abstract: A digital probing type atomic force microscope (AFM) for measuring high aspect structures with high precision. A probe 21 is vibrated while moved to the vicinity of an atomic force region on a specimen surface. The position of the probe is measured when a specified atomic force is detected in the atomic force region. The probe is then moved away from the specimen surface. A servo system for maintaining a gap between the probe and specimen surface is stopped. The probe is moved to a measurement point along the specimen surface while kept away from the specimen. The vibration frequency is a frequency slightly offset from the cantilever resonance point. The atomic force is detected based on the vibration amplitude of the cantilever.

Abstract: A digital probing type atomic force microscope (AFM) for measuring high aspect structures with high precision. A probe 21 is vibrated while moved to the vicinity of an atomic force region on a specimen surface. The position of the probe is measured when a specified atomic force is detected in the atomic force region. The probe is then moved away from the specimen surface. A servo system for maintaining a gap between the probe and specimen surface is stopped. The probe is moved to a measurement point along the specimen surface while kept away from the specimen. The vibration frequency is a frequency slightly offset from the cantilever resonance point. The atomic force is detected based on the vibration amplitude of the cantilever.

Abstract: An information recording medium capable of high-density recording and accurate reproduction and also capable of repeated recording and reproduction, an information recording device that employs the information recording medium has a Co—Si oxide thin film 1 constructed such that columnar crystals 2 are separated by an intergranular phase 3 which contains SiO2 having a lower coefficient of thermal conductivity than the columnar crystals 2. Therefore, the intergranular phase 3 prevents heat transfer from one columnar crystal 2 to another. In addition, the intergranular phase 3 separates columnar crystals 2 from each other, so that the crystalline structure of each columnar crystal 2 is not affected by its adjacent columnar crystal 2.

Abstract: The object of the present invention is to provide an optically functional element having a large change in refractive index with temperature change and a fast change rate in refractive index, a production method for the same and optical switch, temperature sensor and optical information recording medium using the same. The present invention provides a thin film formed directly on a substrate or via other layers, and the film is composed of particles with an average diameter of not larger than 13 nm, observed at film surface. The present invention also provides an optically functional element having an amount of change in refractive index of not less than 2.0×10?4/° C. The present invention further provides a production method for said thin film by sputtering under reduced pressure in an inert gas atmosphere containing 3-15% by volume of oxygen, and optical switch, temperature sensor and optical information recording medium using said element.

Abstract: An absolute accuracy in the range from ±2 nm to ±1 nm for a displacement measurement value is provided by a laser interferometer displacement measuring system. A fluctuating error component that appears corresponding to the wave cycle of laser light is detected and subtracted from the measurement value while a stage is moving, thereby providing a high accuracy.

Abstract: The object of the present invention is to provide an optically functional element having a large change in refractive index with temperature change and a fast change rate in refractive index, a production method for the same and optical switch, temperature sensor and optical information recording medium using the same. The present invention provides a thin film formed directly on a substrate or via other layers, and the film is composed of particles with an average diameter of not larger than 13 nm, observed at film surface. The present invention also provides an optically functional element having an amount of change in refractive index of not less than 2.0×10−4/° C. The present invention further provides a production method for said thin film by sputtering under reduced pressure in an inert gas atmosphere containing 3-15% by volume of oxygen, and optical switch, temperature sensor and optical information recording medium using said element.

Abstract: A near-field probe includes a metallic scatterer fabricated on a substrate in a contour of a circular cone, a polygonal pyramid, a planar ellipse, or a triangle and a film of a metal, a dielectric, or a semiconductor formed in a periphery of the scatterer with film thickness equal to height of the scatterer.

Abstract: An ultra-high density information recording media has an inorganic compound layer 12 on a substrate 11, and in the inorganic compound layer 12, an oxide of at least one kind selected from silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide exists in an amorphous state at a grain boundary of crystal grain of an oxide of at least one kind selected from cobalt oxide, iron oxide, and nickel oxide. The media has a magnetic layer 13 made of an artificial lattice multilayer obtained by alternately laminating a Co layer or an alloy layer consisting of Co as a main phase and a metal element layer of at least one kind selected from Pt and Pd onto the layer 12. Thus, a distribution of magnetic properties serving as a pinning site of the movement of a magnetic wall in case of recording information to the magnetic layer 13 is formed in the magnetic layer 13.

Abstract: The magnetic recording medium includes an underlayer 12 formed of an inorganic compound layer, and a magnetic layer 13 formed over the underlayer 12. The inorganic compound layer as the underlayer 12 has crystal grains and at least one kind of oxide, the crystal grains having as main elements at least one of cobalt oxide, chromium oxide, iron oxide and nickel, the at least one kind of oxide lying as a non-crystalline phase in grain boundaries between the crystal grains and selected from among silicon oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide.

Abstract: An information recording medium capable of high-density recording and accurate reproduction and also capable of repeated recording and reproduction, an information recording device that employs the information recording medium has a Co—Si oxide thin film 1 constructed such that columnar crystals 2 are separated by an intergranular phase 3 which contains SiO2 having a lower coefficient of thermal conductivity than the columnar crystals 2. Therefore, the intergranular phase 3 prevents heat transfer from one columnar crystal 2 to another. In addition, the intergranular phase 3 separates columnar crystals 2 from each other, so that the crystalline structure of each columnar crystal 2 is not affected by its adjacent columnar crystal 2.