Abstract: A method of manufacturing blue light-emitting device is disclosed wherein a laminated structure comprising a p-type In.sub.x Al.sub.y Ga.sub.1-x-y N layer and an n-type In.sub.x Al.sub.y Ga.sub.1-x-y N layer are etched selectively by virtue of a parallel plate type plasma etching (RIE) using etching gas including boron trichloride (BCl.sub.3) and chlorine (Cl.sub.2).

Abstract: A semiconductor light emitting device has an emittive layer formed on a semiconductor substrate, the emittive layer which emits light by being activated with an electric current. Between the substrate and the emittive layer, a reflective layer is formed. In addition, an electrode, which has an aperture for transmitting light emission to the outside of this device, is provided on the emittive layer. In such a structure, at least either one of the reflective layer or the emittive layer is selectively formed right under the aperture formed in the electrode and has the same area as that of the aperture. According to this structure, the emitted light generated laterally from this device is so suppressed that the directivity of light emission is greatly improved in this device.