Abstract: A plasma processing apparatus 1 includes a stock unit 2, a processing chamber 5, and an alignment chamber 4. The stock unit 2 supplies and collects a conveyable tray 7 and accommodates a wafer W in each of the plurality of accommodation holes 7a penetrating through in the thickness direction. In the processing chamber 5, plasma processing is performed to the wafers W accommodated in the tray 7 supplied from the stock unit 2. The alignment chamber 4 includes a rotary table 41 on which the tray 7 before being subjected to plasma processing is placed, and positioning of the wafer W on the rotary table 41 is carried out. A wafer presence-absence determining unit 6a of the control apparatus 6 determines whether the wafer W is present in each of the accommodation holes 7a of the tray 7 placed on the rotary table 41 of the alignment chamber 4, based on a signal from the wafer presence-absence detecting sensors 44A and 44B.

Abstract: A dry etching apparatus comprises: a vacuum chamber where a processing target is disposed on a bottom wall side of an internal space; a coil for generating plasma that is disposed above and outside the vacuum chamber and has conductors disposed so that a gap is formed in a plane view; a top wall that closes the top of the internal space and has a transparent section at a position corresponding to the gap between conductors of the coil 36 in the plane view; and a camera that is disposed above the coil and can capture at least a part of the processing target in a field of view through the gap and the transparent section. The status of the processing target during plasma processing can be observed in real-time.

Abstract: An object of the present invention is to provide a plasma etching method by which both of a requirement for a trench shape and a requirement for a aspect ratio can be satisfied, and a trench having a side wall of a smooth shape can be formed. According to the present invention, a silicon substrate is placed on a lower electrode (120), etching gas is supplied through a gas introducing port (140) and exhausted from an exhaust port (150), high frequency powers (130a, 130b) supply high-frequency electricity to an upper electrode (110) and a lower electrode (120), respectively, in order to energize the etching gas into plasma state, using an ICP method, and then activated species are generated to make etching of the silicon substrate be progressed. As the etching gas, mixed gas, which includes mainly SF6 gas added with O2 gas and He gas, is used.

Abstract: A thermal recording medium wherein ultraviolet absorbent is included in undercoat layer and/or in thermal sensitive color developing layer, ultraviolet isolator consisted of calcined particle which is flaky pigment whose refractive index is 1.5 to 1.6 and whose surface is coated with insoluble cerium compound and amorphous silica is included in thermal sensitive color developing layer and/or in protective layer, and fluorescent dye is included in protective layer.

Abstract: A color developing sheet for pressure-sensitive recording sheet containing in its color developing layer, an organic coreactant (color developing agent), calcium carbonate and styrene-butadiene copolymer latex or modified styrene-butadiene copolymer latex of an average particle size of less than 0.08.mu. whereby a color developing sheet having excellent water resistance, very improved mark formation, improved printability, high surface strength, rapid setting of ink, etc. is provided.