Patents by Inventor Sumio Sekiyama
Sumio Sekiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967530Abstract: Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5° to 5° to a high-temperature nitriding treatment at 800° C. to 1,000° C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate 11 to produce a GaN film carrier having a surface of an N polar face; forming an ion implantation region 13ion by carrying out ion implantation on the GaN film 13; laminating and joining a support substrate 12 with the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted region 13ion in the GaN film 13 to transfer a GaN thin film 13a onto the support substrate 12, to produce a GaN layered substrate 10 having, on the support substrate 12, a GaN thin film 13a having a surface of a Ga polar face.Type: GrantFiled: June 11, 2019Date of Patent: April 23, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Sumio Sekiyama, Yoshihiro Kubota
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Publication number: 20210111076Abstract: Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5° to 5° to a high-temperature nitriding treatment at 800° C. to 1,000° C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate 11 to produce a GaN film carrier having a surface of an N polar face; forming an ion implantation region 13ion by carrying out ion implantation on the GaN film 13; laminating and joining a support substrate 12 with the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted region 13ion in the GaN film 13 to transfer a GaN thin film 13a onto the support substrate 12, to produce a GaN layered substrate 10 having, on the support substrate 12, a GaN thin film 13a having a surface of a Ga polar face.Type: ApplicationFiled: June 11, 2019Publication date: April 15, 2021Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Sumio SEKIYAMA, Yoshihiro KUBOTA
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Patent number: 9520522Abstract: A method of manufacturing a solar cell module comprising pressing a first silicone gel sheet provided on a sunlight receiving surface of a solar cell string and a second silicone gel sheet provided on an opposite side sunlight non-receiving surface of the solar cell string in vacuum to encapsulate the solar cell string with the first and second silicone gel sheets; disposing the sunlight receiving surface side of the first silicone gel sheet on one surface of a transparent light receiving panel and disposing butyl rubber in a picture frame-like shape along an outer peripheral portion of a panel where the first silicone gel sheet is not formed and laying the light receiving panel and the light non-receiving panel or back sheet over each other with the silicone gel sheet-encapsulated solar cell string on the inside, and pressing them at 100 to 150° C. in vacuum to press bond the light receiving surface panel and the light non-receiving surface panel or back sheet to each other through the butyl rubber.Type: GrantFiled: October 3, 2013Date of Patent: December 13, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomoyoshi Furihata, Atsuo Ito, Hiroto Ohwada, Hyung Bae Kim, Sumio Sekiyama, Junichi Tsukada, Atsushi Yaginuma, Naoki Yamakawa
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Patent number: 9385253Abstract: A method of manufacturing a solar cell module comprising adhering a first silicone gel sheet to one surface of a transparent light receiving panel to be a sunlight incidence surface; adhering a second silicone gel sheet to one surface of a light non-receiving panel or back sheet on the side opposite to the sunlight incidence surface; disposing a solar cell string on the first silicone gel sheet of the light receiving panel, and disposing butyl rubber in a picture frame-like shape along an outer peripheral region of a panel where either of the silicone gel sheets are not formed; and laying the light receiving panel and the light non-receiving panel or back sheet over each other with the silicone gel sheets on the inside, and pressing them at 100 to 150° C. in vacuum to encapsulate the solar cell string with the silicone gel sheets and press bond the light receiving panel and the light non-receiving panel or back sheet to each other through the butyl rubber.Type: GrantFiled: October 3, 2013Date of Patent: July 5, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomoyoshi Furihata, Atsuo Ito, Hiroto Ohwada, Hyung Bae Kim, Sumio Sekiyama, Junichi Tsukada, Atsushi Yaginuma, Naoki Yamakawa
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Publication number: 20140099746Abstract: A method of manufacturing a solar cell module includes pressing a first silicone gel sheet provided on a sunlight receiving surface and a second silicone gel sheet provided on an opposite side sunlight non-receiving surface in vacuum to encapsulate the solar cell string with the first and second silicone gel sheets; disposing the sunlight receiving side of the first silicone gel sheet on one surface of a transparent light receiving panel and disposing butyl rubber in a picture frame-like shape along an outer peripheral portion of the first silicone gel sheet and laying the light receiving panel and the light non-receiving panel or back sheet over each other with the silicone gel sheet-encapsulated solar cell string on the inside, and pressing them at 100 to 150° C. in vacuum to press bond the light receiving panel and the non-receiving panel to each other through the butyl rubber.Type: ApplicationFiled: October 3, 2013Publication date: April 10, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomoyoshi Furihata, Atsuo Ito, Hiroto Ohwada, Hyung Bae Kim, Sumio Sekiyama, Junichi Tsukada, Atsushi Yaginuma, Naoki Yamakawa
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Publication number: 20140096885Abstract: A method of manufacturing a solar cell module includes adhering a first silicone gel sheet to one surface of a transparent light receiving panel to be a sunlight incidence surface; adhering a second silicone gel sheet to one surface of a light non-receiving panel on the side opposite to the sunlight incidence surface; disposing a solar cell string on the first silicone gel sheet of the light receiving panel, and disposing butyl rubber in a picture frame-like shape along an outer peripheral portion of the first silicone gel sheet; and laying the light receiving panel and the non-receiving panel over each other with the silicone gel sheets on the inside, and pressing them at 100 to 150° C. in vacuum to encapsulate the solar cell string with the silicone gel sheets and press bond the light receiving panel and the non-receiving panel to each other through the butyl rubber.Type: ApplicationFiled: October 3, 2013Publication date: April 10, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomoyoshi Furihata, Atsuo Ito, Hiroto Ohwada, Hyung Bae Kim, Sumio Sekiyama, Junichi Tsukada, Atsushi Yaginuma, Naoki Yamakawa
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Patent number: 6261965Abstract: A manufacturing method of a semiconductor device removes a silicon carbide layer, which is undesirably formed on a surface or the like of a contact hole by dry etching, by plasma treatment using a gas that contains hydrogen. The silicon carbide layer can be effectively removed without causing damage to a substrate by setting the content of hydrogen to 80% or more, a gas flow rate to 50 SCCM or more, and a pressure to 50 mTorr or more.Type: GrantFiled: July 2, 1999Date of Patent: July 17, 2001Assignee: Oki Electric Industry Co., Ltd.Inventor: Sumio Sekiyama