Patents by Inventor Sumio SUGISAKI

Sumio SUGISAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memristor and neural network using same
    Patent number: 11276820
    Abstract: Provided is a memristor that can be manufactured at a low temperature, and does not include metals of which resources might be depleted. This memristor includes a first electrode, a second electrode, and a memristor layer of an oxide having elements of Ga, Sn, and oxygen, disposed between the first electrode and the second electrode. When voltage is applied to the first electrode with respect to the second electrode, the voltage being positive or negative, a current flows; when voltage of a data-set voltage value is applied, a state is transitioned from a high-resistance state to a low-resistance state; and when voltage of a data-reset voltage value that is of an opposite sign to that of the data-set voltage value is applied, the state is transitioned from a low-resistance state to a high-resistance state.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: March 15, 2022
    Assignees: RYUKOKU UNIVERSITY, ROHM CO., LTD.
    Inventors: Mutsumi Kimura, Sumio Sugisaki, Yoshinori Miyamae
  • MEMRISTOR AND NEURAL NETWORK USING SAME
    Publication number: 20210036223
    Abstract: Provided is a memristor that can be manufactured at a low temperature, and does not include metals of which resources might be depleted. This memristor includes a first electrode, a second electrode, and a memristor layer of an oxide having elements of Ga, Sn, and oxygen, disposed between the first electrode and the second electrode. When voltage is applied to the first electrode with respect to the second electrode, the voltage being positive or negative, a current flows; when voltage of a data-set voltage value is applied, a state is transitioned from a high-resistance state to a low-resistance state; and when voltage of a data-reset voltage value that is of an opposite sign to that of the data-set voltage value is applied, the state is transitioned from a low-resistance state to a high-resistance state.
    Type: Application
    Filed: October 19, 2018
    Publication date: February 4, 2021
    Inventors: Mutsumi KIMURA, Sumio SUGISAKI, Yoshinori MIYAMAE