Abstract: A smart data signals platform for artificial intelligence/machine learning (AI/ML)-based modeling and simulation is structured to pre-process input data by structuring previously unstructured data that relates to a structured data item and linking the structured data to the data item to generate an enriched dataset. The enriched dataset is used to generate a trigger signal by evaluating at least an aspect to the enriched dataset against at least one criterion that corresponds to a loss hypothesis. The trigger signal is used to automatically monitor subsequently received structured data, access corresponding unstructured data and generate an analysis dataset for one or more machine learning models. The one or more machine learning models generate a computer-based prediction based on the analysis dataset. The prediction can include a resource degradation indicator.

Abstract: A method, non-transitory computer readable medium, device and system that maintains aggregate visit data comprising group visit data for a plurality of groups and a plurality of affiliate websites based on processed request data for a plurality of requests. First request data corresponding to a first request from a client to a web server system is received. At least a first group from the plurality of groups is determined based on the first request data. First group visit data for the first group is obtained from the aggregate visit data. Affinity data comprising affinity scores for the affiliate websites is generated based on the first group visit data and is used to determine affiliate content served in association with web content served by the web server system.

Abstract: A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Abstract: Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

Abstract: Methods and systems for providing an enhanced response to a query in an internet of things (IoT) environment are provided. The method includes receiving a query and generating a response for the query. The method further includes determining at least one intent in relation to at least one portion of the generated response and ranking the at least one intent based on user preferences and a usage history associated with at least one user device present in an IoT environment. The method further includes distinguishing the at least one portion of the generated response with the determined at least one intent based on the ranking of the at least one intent.

Abstract: Exemplary semiconductor processing methods may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include a layer of a silicon-containing material. The silicon-containing material may be a silicon-and-carbon-containing material, a silicon-carbon-and-nitrogen-containing material, a silicon-and-nitrogen-containing material, a silicon-and-oxygen-containing material, or silicon material. The methods may include forming plasma effluents of the etchant precursor. The methods may include contacting the substrate with the plasma effluents of the etchant precursor. The contacting may etch a portion of the layer of the silicon-containing material. The processing region may be maintained at a cryogenic temperature while contacting the substrate with the plasma effluents of the etchant precursor.

Abstract: Methods and systems for providing an enhanced response to a query in an internet of things (IoT) environment are provided. The method includes receiving a query and generating a response for the query. The method further includes determining at least one intent in relation to at least one portion of the generated response and ranking the at least one intent based on user preferences and a usage history associated with at least one user device present in an IoT environment. The method further includes distinguishing the at least one portion of the generated response with the determined at least one intent based on the ranking of the at least one intent.

Abstract: A smart data signals platform for artificial intelligence/machine learning (AI/ML)-based modeling and simulation is structured to pre-process input data by structuring previously unstructured data that relates to a structured data item and linking the structured data to the data item to generate an enriched dataset. The enriched dataset is used to generate a trigger signal by evaluating at least an aspect to the enriched dataset against at least one criterion that corresponds to a loss hypothesis. The trigger signal is used to automatically monitor subsequently received structured data, access corresponding unstructured data and generate an analysis dataset for one or more machine learning models. The one or more machine learning models generate a computer-based prediction based on the analysis dataset. The prediction can include a resource degradation indicator.

Abstract: Techniques are provided for personal data and AI system integration. It is determined to respond to a user prompt. An AI system is provided a user prompt description, a database description describing a user database comprising user data associated with the user, and instructions to provide a query for relevant data in the user database that the AI system can use to answer to the user prompt. A query is received from the AI system and executed against the user database to generate a result set. The result set is submitted to the AI system. The answer is received from the AI system based on the user prompt description and the result set. A response is generated for the user based on the answer from the AI system.

Abstract: The present disclosure relates to a wafer that includes a silicon core having a textured surface and a dielectric layer having a first thickness, where the textured surface includes a plurality of features where each feature is characterized by a first point and a second point separated by a distance, H, at least a portion of the features further include a solid channel positioned substantially at or near the first point, and the solid channel passes through at least a portion of the first thickness.

Abstract: A security server device, method, non-transitory computer readable medium and security system that receives request data for a request from a client to a web server system where the request comprises a session identifier (ID) for a session between an authenticated user and the web server system. A determination is made whether the client is a single-user device based on the request data and multi-domain data. Another determinations is made on whether the client is compromised based on the request data. In response to the determinations that the client is a single-user device and is not compromised an extension of the session between the authenticated user on the client and the web server system is caused.

Abstract: A smart data signals platform for artificial intelligence/machine learning (AI/ML)-based modeling and simulation is structured to pre-process input data by structuring previously unstructured data that relates to a structured data item and linking the structured data to the data item to generate a validated enriched dataset. The validated enriched dataset is used to generate a trigger signal by evaluating at least an aspect to the enriched dataset against at least one criterion that corresponds to a loss hypothesis. The trigger signal is used to automatically monitor subsequently received structured data, access corresponding unstructured data and generate an analysis dataset for one or more machine learning models. The one or more machine learning models generate a computer-based prediction based on the analysis dataset. The prediction can include a resource degradation indicator.

Abstract: A smart data signals platform for artificial intelligence/machine learning (AI/ML)-based modeling and simulation is structured to pre-process input data by structuring previously unstructured data that relates to a structured data item and linking the structured data to the data item to generate a validated enriched dataset. The validated enriched dataset is used to generate a trigger signal by evaluating at least an aspect to the enriched dataset against at least one criterion that corresponds to a loss hypothesis. The trigger signal is used to automatically monitor subsequently received structured data, access corresponding unstructured data and generate an analysis dataset for one or more machine learning models. The one or more machine learning models generate a computer-based prediction based on the analysis dataset. The prediction can include a resource degradation indicator.

Abstract: Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

Abstract: Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

Abstract: A method for receiving processed information at a remote device is described. The method includes transmitting from the remote device a verbal request to a first information provider and receiving a digital message from the first information provider in response to the transmitted verbal request. The digital message includes a symbolic representation indicator associated with a symbolic representation of the verbal request and data used to control an application. The method also includes transmitting, using the application, the symbolic representation indicator to a second information provider for generating results to be displayed on the remote device.

Abstract: Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.

Abstract: A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material than the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to the non-plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a silicon-containing dielectric film on the dielectric material.

Abstract: A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Abstract: Methods of manufacturing a semiconductor processing chamber showerheads may include forming a melted aluminum alloy composition, cooling the melted aluminum alloy composition at a rate of at least 103 K/sec to form solid aluminum alloy particles, and forming a core region of a showerhead from the solid aluminum alloy particles. The core region of the showerhead may include an inner core region and an outer core region that may be coupled together. The inner core region may define a plurality of apertures. The outer core region may define a channel that receives a heating element. The methods may include coating the core region with one of aluminum or aluminum oxide and joining a peripheral edge of the outer core region with an inner edge of a metallic annular liner. The metallic annular liner may have a lower thermal conductivity than the core region of the showerhead.