Abstract: A solar cell is provided with: a semiconductor substrate; an insulating layer formed of a silicon compound or a metal compound, and having a predetermined pattern over the substrate; and a surface covering layer formed of an amorphous semiconductor, having a same pattern as the insulating layer, and that directly contacts the insulating layer.

Abstract: A solar cell is provided with: an n-type region formed over a substrate; a p-type region formed over the substrate and the n-type region; and mark sets for judging positional deviation between the n-type region and the p-type region. The mark sets respectively include first marks, and second marks, which are formed within the first marks.

Abstract: A solar cell is provided with: an n-type region formed over a substrate; a p-type region formed over the substrate and the n-type region; and mark sets for judging positional deviation between the n-type region and the p-type region. The mark sets respectively include first marks, and second marks, which are formed within the first marks.

Abstract: A solar cell is provided with: a semiconductor substrate; an insulating layer formed of a silicon compound or a metal compound, and having a predetermined pattern over the substrate; and a surface covering layer formed of an amorphous semiconductor, having a same pattern as the insulating layer, and that directly contacts the insulating layer.

Abstract: Apparatus and methods are disclosed for inscribing a pattern on a reticle blank to produce a lithography reticle. As a reticle blank is inscribed using a charged particle beam (e.g., electron beam), some of the incident charged particles pass through the reticle blank and are backscattered from underlying structure (e.g., from a stage used to hold the reticle blank during inscription). These backscattered particles reduce the pattern resolution on the reticle. The present apparatus and methods reduce the number of backscattered particles re-entering the reticle blank, thereby improving pattern resolution.

Abstract: Methods are disclosed for performing charged-particle-beam (CPB, e.g., electron-beam) microlithography with reduced Coulomb effects being manifest in pattern images as formed on the surface of a sensitive substrate. The pattern is defined on a segmented reticle, which can be a scattering-stencil reticle or scattering-membrane reticle. In an embodiment, the beam current actually reaching the substrate, as a proportion of beam current actually passing through the reticle, is reduced to 50% or less during exposure of the pattern. To achieve this reduction, the pattern as defined on the reticle can be normal or inverted in tone as required, and the resist on the substrate can be positive or negative in tone as required. In an example embodiment, the beam current reaching the substrate is reduced by establishing an opening ratio of 50% or less for the pattern as a whole as defined on the reticle.

Abstract: A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode (2) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface (1a), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface (1a).

Abstract: Methods and apparatus for correcting the proximity effect in a charged-particle-beam (CPB) microlithography system are disclosed. The disclosed methods involve adjusting the exposure dose and performing local resizing on pattern elements defined on a reticle in order to eliminate pattern distortions caused by the proximity effect. In a first embodiment, the exposure dose is adjusted so that a first pattern element situated at a location on the reticle exhibiting greater-than-average (or having the greatest) distortion due to the proximity effect has a desired line-width. Other pattern elements defined on the reticle are then enlarged so that they produce resist images having desired respective line-widths. In a second embodiment, the exposure dose is adjusted so that a first pattern element situated at a location on the reticle exhibiting nearly average (or average) distortion due to the proximity effect has a desired line-width.

Abstract: Methods are disclosed for performing charged-particle-beam (CPB, e.g., electron-beam) microlithography with reduced Coulomb effects being manifest in pattern images as formed on the surface of a sensitive substrate. The pattern is defined on a segmented reticle, which can be a scattering-stencil reticle or scattering-membrane reticle. In an embodiment, the beam current actually reaching the substrate, as a proportion of beam current actually passing through the reticle, is reduced to 50% or less during exposure of the pattern. To achieve this reduction, the pattern as defined on the reticle can be normal or inverted in tone as required, and the resist on the substrate can be positive or negative in tone as required. In an example embodiment, the beam current reaching the substrate is reduced by establishing an opening ratio of 50% or less for the pattern as a whole as defined on the reticle.

Abstract: A method to repair a scattering stencil type mask having a high electron beam scattering property and low electron absorption. In order to correct a defect caused at the time of manufacturing of the mask, which is being used when a reduction projection image is transferred onto a substrate and has a pattern projection portion comprising an electron beam scattering material, a repair membrane is formed in the defective portion of the mask by irradiating a charged particle beam to said defect while a gas including substances having high scattering properties are supplied to the close vicinity of the defective portion.

Abstract: Apparatus and methods are disclosed for cleaning an object, such as a reticle or electron-optical component used in performing electron-beam microlithography, using an electron beam. The cleaning can be performed in the presence or absence of a treatment gas. When performed without a treatment gas, an electron beam is directed to impinge on the object at an energy sufficient to volatilize contaminant deposits on the object. When performed with a treatment gas, the electron beam need not be directed at the object, but electrons from the beam have an energy sufficient to ionize molecules of the treatment gas. The ionized molecules volatilize the contaminant deposits for removal using a vacuum pump. For example, the beam can be directed to a scattering body that produces scattered electrons having sufficient energy to volatilize the contaminant deposits.

Abstract: Reticle-defect-correction methods are disclosed by which an “opaque” defect in a reticle, such as a scattering-stencil reticle, is corrected while ensuring good verticality in the side wall of the affected pattern element. A fabricated reticle, defining a pattern, is inspected to produce corresponding pattern-inspection coordinate data for the pattern. An opaque defect is detected from a comparison of the pattern-inspection data with corresponding design-specified data (e.g., CAD data) for the pattern. If an opaque error is found, a unit of a protective film (e.g., an FIB-induced film of a carbon and/or silicon compound) is formed along the edge of the affected pattern element adjacent the opaque defect. The unit of protective film protects the edge during subsequent correction machining, thereby preserving the verticality of the side wall of the affected pattern element.

Abstract: Apparatus and methods are disclosed for inscribing a pattern on a reticle blank to produce a lithography reticle. As a reticle blank is inscribed using a charged particle beam (e.g., electron beam), some of the incident charged particles pass through the reticle blank and are backscattered from underlying structure (e.g., from a stage used to hold the reticle blank during inscription). These backscattered particles reduce the pattern resolution on the reticle. The present apparatus and methods reduce the number of backscattered particles re-entering the reticle blank, thereby improving pattern resolution.

Abstract: Apparatus and methods are disclosed for measuring changes in light absorption of a sample optical component. The sample is held in a sample holder in a sample chamber during irradiation by an intense light, usually pulsatile light. Molecules of a gas are introduced into the sample chamber as the sample is irradiated. The molecules can be of a material suspected to become adhered to or absorbed by the sample in a way that causes an undesired change in light absorption by the sample. Changes in light absorption by the sample are preferably measured photoacoustically. The molecules of the gas can be generated by controlled irradiation of a "source material" with a light (which can be the same as used to irradiate the sample) sufficient to generate such molecules of gas from the source material, and routing the gaseous molecules to the sample as the sample is irradiated.

Abstract: An etching apparatus comprises a first tank for containing an etchant, a second tank for containing a non-etchant, a partition positioned between the first tank and the second tank and consisting of a plurality of partition planes, and holders for holding a plurality of substrates against the partition. One or more openings are formed in each partition plane of the partition, and the substrates are held against the partition so that the openings formed in the partition planes are closed by the substrates. Each substrate is larger than the associated opening in size and has a top surface and an etching surface on the bottom. Each of the holders holds one of the substrates so that the etching surface of the substrate is exposed to the etchant contained in the first tank through the opening without touching the non-etchant and that the top surface of the substrate is exposed to the non-etchant contained in the second tank without touching the etchant.