Patents by Inventor Sumner Xia

Sumner Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12665006
    Abstract: Each Stop Read Go (SRG) setting has different latency and reliability issues. An aspect of the present disclosure is related to minimizing these reliability risks while maintaining the benefit of low suspend latency when implementing SRG.
    Type: Grant
    Filed: August 7, 2023
    Date of Patent: June 23, 2026
    Assignee: Sandisk Technologies, Inc.
    Inventors: Jing Fu, Weikai Xu, Qianqian Li, Sumner Xia
  • Publication number: 20260073994
    Abstract: A memory apparatus includes drain-side select gate transistors for coupling to a drain-side of memory holes of memory cells and configured to retain a drain-side transistor threshold voltage. The memory apparatus also includes source-side select gate transistors for coupling to a source-side of each of the memory holes and configured to retain a source-side transistor threshold voltage. A control means pre-reads the drain-side transistor threshold voltage of the drain-side select gate transistors and the source-side transistor threshold voltage of source-side select gate transistors of the memory holes having the memory cells being erased in an erase operation. The control means adjusts at least one of a drain-side select gate voltage applied to the drain-side select gate transistors and a source-side select gate voltage applied to the source-side select gate transistors based on at least one of the pre-read of the drain-side transistor threshold voltage and the source-side transistor threshold voltage.
    Type: Application
    Filed: September 12, 2024
    Publication date: March 12, 2026
    Inventors: Ming Wang, Liang Li, Sumner Xia, Xia Ju
  • Publication number: 20260072822
    Abstract: To increase life times of non-volatile memory devices, the bad block information for a device includes not just whether a device is considered good or bad, but, for bad blocks data on the category of the block's failure. When the number of bad blocks exceeds a threshold level, blocks formerly marked bad can, based on their failure category, have their status updated to good for subsequent usage. This information can also be used during factory testing to update the status of blocks initially marked as bad based on failure category.
    Type: Application
    Filed: September 9, 2024
    Publication date: March 12, 2026
    Applicant: Sandisk Technologies, Inc.
    Inventors: Yanli Fu, Liang Li, Sumner Xia
  • Patent number: 12572466
    Abstract: To increase life times of non-volatile memory devices, the bad block information for a device includes not just whether a device is considered good or bad, but, for bad blocks data on the category of the block's failure. When the number of bad blocks exceeds a threshold level, blocks formerly marked bad can, based on their failure category, have their status updated to good for subsequent usage. This information can also be used during factory testing to update the status of blocks initially marked as bad based on failure category.
    Type: Grant
    Filed: September 9, 2024
    Date of Patent: March 10, 2026
    Assignee: Sandisk Technologies, Inc.
    Inventors: Yanli Fu, Liang Li, Sumner Xia
  • Publication number: 20240428834
    Abstract: Each Stop Read Go (SRG) setting has different latency and reliability issues. An aspect of the present disclosure is related to minimizing these reliability risks while maintaining the benefit of low suspend latency when implementing SRG.
    Type: Application
    Filed: August 7, 2023
    Publication date: December 26, 2024
    Applicant: Western Digital Technologies, Inc.
    Inventors: Jing Fu, Weikai Xu, Qianqian Li, Sumner Xia