Abstract: A method for performing a matrix multiplication operation being secure against side-channel attacks according to one embodiment, which is performed by a computing device comprising one or more processors and a memory storing one or more programs to be executed by the one or more processors, includes shuffling an order of execution of multiplication operations between elements of a first matrix and elements of a second matrix for a matrix multiplication operation between the first matrix and the second matrix; and performing the matrix multiplication operation based on the shuffled order of execution.

Abstract: Provided is a display device. The display device includes first to second gate lines provided on a substrate having first and second pixel areas and extending in a first direction, first to third data lines extending in a second direction perpendicular to the first direction and intersecting the first to second gate lines, and a first reflective electrode provided inside the first pixel area and a second reflective electrode provided inside the second pixel area, from a planar viewpoint, wherein the first to second gate lines and the first to third data lines define the first pixel area and the second pixel area, wherein the first to second gate lines are spaced apart from each other in the second direction, wherein the first to third data lines are spaced apart from each other in the first direction.

Abstract: A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 3 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 3 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 3 element.

Abstract: Disclosed is a method by a terminal in a mobile communication system including receiving, from a base station, CSI measurement configuration information for a serving cell, measuring a first reference signal for obtaining reference signal received power (RSRP) information based on the first CSI configuration information related to the RSRP for the physical layer signaling, transmitting the RSRP information to the base station through the physical layer signaling, measuring a second reference signal for obtaining CSI, and transmitting the CSI to the base station, the first CSI configuration information including information indicating whether to use group based reporting for the RSRP information, and the first CSI configuration information including information indicating a number of antenna ports for the RSRP information when the group based reporting is not configured for the RSRP information.

Abstract: The present invention relates to a coolant heater. The purpose of the present invention, a coolant heater which effectively heats coolant of a vehicle by means of a heating unit, is to provide a coolant heater having improved sensitivity and responsiveness to over-heating and assured stability by utilizing a temperature fuse to prevent over-heating. Another purpose of the present invention is to provide a coolant heater having enhanced durability of the temperature fuse coupling part by improving the structure by which the temperature fuse is fixed.

Abstract: A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.

Abstract: The present disclosure relates to a communication technique for combining a 5G communication system for supporting a higher data transmission rate than a 4G system with an IoT technology, and a system therefor. The present disclosure can be applied to 5G communication and IoT related technology-based intelligent services (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail business, security and safety related services, etc.).

Abstract: A method of displaying an interface for providing a social networking service (SNS) through an anonymous profile, performed by a user terminal, includes displaying a first list of at least one anonymous chatroom created by a user account for an instant messaging service (IMS) using a first region on a first page in an interface for the IMS, displaying a second list of at least one anonymous profile created to be interlinked with the user account using a first region on a second page in the interface for the IMS, and displaying, in response to an input of selecting any one anonymous profile in the second list, an interface for providing the SNS to through the selected anonymous profile.

Abstract: The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.

Abstract: The present disclosure discloses a feedback field-effect electronic device using a feedback loop operation and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the array circuit includes a plurality of feedback field-effect electronic devices in which the source region of a diode structure and the drain region of an access electronic device are connected in series, wherein the diode structure is connected to a bit line and a first word line, the access electronic device is connected to a source line and a second word line, and a random access operation is performed by selectively applying voltage to the bit line and the first and second word lines.

Abstract: A flexible display device includes a substrate, a light emitting layer, a first insulating layer, and a conductive layer. The substrate includes a bent region and a non-bent region. The light emitting layer overlaps the non-bent region. The first insulating layer is disposed on the substrate. The conductive layer is disposed on the first insulating layer. A sidewall of the first insulating layer includes a first tapered surface. The first tapered surface includes at least three curved surface portions continuously arranged with one another.

Abstract: Disclosed are an antibody to human programmed cell death-ligand 1 (PD-L1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer or infectious diseases containing the same.

Abstract: Provided is an integrated heat exchanger including a header tank in which a gasket is interposed between the header and the tank to seal a portion that the header and the tank are coupled to each other, wherein an inner space of the header tank is partitioned such that a first space portion formed between regions in which the heat exchange medium flows is formed to be in communication with an external region of the header tank through a heat exchange medium discharging means formed at a portion that the header and the tank are coupled to each other, thereby preventing the heat exchange mediums from being leaked between two heat exchange portions and to detect a leakage of the heat exchange medium even when the leakage of the heat exchange medium occurs.

Abstract: Provided is an active camouflage device including a reflective layer, a first electrode disposed on the reflective layer, a second electrode facing the first electrode, and an electrolyte provided between the first and second electrodes. The first electrode includes a transparent electrode, and the second electrode includes a metal mesh.

Abstract: A spatial light modulator according to the inventive concept includes a light modulation layer including a plurality of pixels arranged on a plane perpendicular to a first direction, a first lens array including first lenses corresponding one-to-one with the pixels, a second lens array including second lenses corresponding one-to-one with the first lenses, and a spacer layer between the first lens array and the second lens array. Each of the first lenses has a first central axis extending in the first direction and the first central axes of the first lenses meet at different positions for each of the pixels.

Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

Abstract: There is provided a semiconductor device having enhanced operation performance by utilizing a cut region where a gate cut is implemented. There is provided a semiconductor device comprising a first active pattern, a second active pattern, a third active pattern, and a fourth active pattern, all of which extend in parallel in a first direction, and are arranged along a second direction intersecting the first direction; a first gate electrode extended in the second direction on the first to fourth active patterns a first cut region extended in the first direction between the first active pattern and the second active pattern to cut the first gate electrode and a second cut region extended in the first direction between the third active pattern and the fourth active pattern to cut the first gate electrode, wherein one or more first dimensional features related to the first cut region is different from one or more second dimensional features related to the second cut region.

Abstract: An air conditioner includes a discharge blade configured to move between a guide position at which a direction of air blown from a blower fan and discharged to an outlet is controlled, and a closing position at which the outlet is closed, wherein the discharge blade includes a plurality of blade holes through which the air is discharged through the discharge blade at the closing position, wherein the discharge blade moves between the guide position and the closing position and controls an air flow from the blower fan to a discharge plate or the outlet. Through this configuration, an air flow discharged to the outside of the housing can be controlled by operation of the discharge blade.

Abstract: Phase change material modules for use in a heat exchanger are described. The phase change material module comprises two or more set of a plurality of substantially aligned hollow structures arranged to form a porous structure. A phase change material capable of undergoing a phase change as a result of heat exchange between it and a fluid is housed within the hollow tubes. Also described is a phase change material module with hollow tubes having a cross-sectional area through the phase change material selected from elliptical, rectangular, stadium-shaped, teardrop-shaped, airfoil-shaped, rounded rectangle and ovoid. A heat exchanger comprising a plurality of the phase change material modules, a first fluid inlet and outlet, and a second fluid inlet and outlet, wherein the phase change material modules are repeated circulated from alignment with the first fluid inlet and the second fluid inlet is also described.

Abstract: A display device including: a display panel including a plurality of pixels; and a data driver configured to arrange the display panel into a plurality of pixel blocks, and to output a data voltage with different slew rates to the plurality of pixel blocks, wherein the slew rates are based on distances of the plurality of pixel blocks from the data driver, wherein a boundary between adjacent pixel blocks with different slew rates is changeable.